IRLR2908PBF

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IRLR2908PBF Application Field and Working Principle

IRLR2908PBF is a Power MOSFET from Infineon Technologies designed for use in a variety of applications. This device employs a state-of-the-art HEXFET technology specifically designed to improve switching performance, reduce power losses and simplify thermal design. The IRLR2908PBF has a maximum drain-to-source voltage of 75V and a maximum drain current of 8.25A which make it well suited for use in automotive and industrial applications, such as motor control, battery management, power inverters, and DC-DC converters.

Features

• Maximum drain-source voltage: 75V
• Maximum drain current: 8.25A
• Minimum threshold voltage: 1.8V
• Maximum on-state resistance: 0.009Ω
• Package: PQFN 4x4mm

IRLR2908PBF Working Principles

The IRLR2908PBF is a single enhancement-mode MOSFET device. The device works by a voltage being applied across the gate of the MOSFET, causing a potential inversion of the substrate relative to the source region. This potential difference controls the pinch-off effect which switches the device on or off depending on the potential difference. If the voltage is high enough the potential difference causes electrons to flow from the majority carriers in the substrate to the source region, resulting in the device being switched on. If the voltage is too low then the majority carriers do not move, resulting in the device being switched off.

The IRLR2908PBF has a very low on-state resistance. The on-state resistance is characterized by the resistance of the drain-to-source route. The lower this resistance, the better the performance of the device. The IRLR2908PBF has a maximum on-state resistance of only 0.009Ω, making it one of the best performing MOSFET devices available. The low resistance is achieved by using ultra-thin silicon layers and a highly efficient parallel-gate architecture.

The IRLR2908PBF is also characterized by its low power dissipation capabilities. The device is able to turn on and off very quickly and is thus less prone to heating. This makes the IRLR2908PBF an ideal choice for applications requiring high speed switching, such as motor control and DC-DC converters.

The IRLR2908PBF has a low threshold voltage. This is the minimum voltage required to switch the device on. This makes it well suited for use in low power, low voltage applications where accurate voltage regulation is required. The IRLR2908PBF has a minimum threshold voltage of just 1.8V.

The IRLR2908PBF has a very compact package size, with a maximum size of just 4x4mm. This small package allows for its use in applications requiring high levels of integration without compromising performance. The device is also highly reliable, with a maximum junction temperature of 175°C.

Conclusion

The IRLR2908PBF is a power MOSFET from Infineon Technologies designed for use in a variety of applications. It features a low on-state resistance, low threshold voltage and a compact package size. It is well suited for use in motor control, battery management, power inverters, and DC-DC converters. This device is reliable and highly efficient, making it an ideal choice for many applications requiring high speed switching.

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