| Allicdata Part #: | IRLR3636PBF-ND |
| Manufacturer Part#: |
IRLR3636PBF |
| Price: | $ 1.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 50A D-PAK |
| More Detail: | N-Channel 60V 50A (Tc) 143W (Tc) Surface Mount D-P... |
| DataSheet: |  IRLR3636PBF Datasheet/PDF |
| Quantity: | 130 |
| 1 +: | $ 1.21590 |
| 10 +: | $ 1.09557 |
| 100 +: | $ 0.88030 |
| 500 +: | $ 0.68466 |
| 1000 +: | $ 0.56728 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 100µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 143W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3779pF @ 50V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
Description
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)The IRLR3636PBF MOSFET is a high-end electric device that is able to control current flow depending on the voltage applied to its gate. This device is usually specified in terms of its static drain current, static drain-source voltage, input capacitance, thermal resistance, second breakdown voltage and package thermals. The IRLR3636PBF is a single, n-channel MOSFET with a P-channel type and a drain-source breakdown voltage of 36 V. It is mostly used in applications such as an electronic switch, power supply and motor switching, due to its wide range of capabilities and its fast switch response time.Working PrincipleThe IRLR3636PBF works on the same principle as other MOSFETs – it works by applying a voltage to its gate which will in turn, control the amount of current flowing through the drain-source junction. The voltage applied to the gate of the MOSFET will result in a much lower voltage across the drain-source junction due to the phenomenon of the body effect. This in turn, will increase or decrease the amount of current flowing through the drain-source junction depending on the voltage applied to the gate.Application FieldThe IRLR3636PBF is largely used in scenarios where a relatively low power device is needed to control large amounts of current. Apart from being a versatile switch, the IRLR3636PBF can also be used in power supply circuits as a load switch, driven by the 5V logic gates. It is also popularly used in motor driving circuits, due to its ability to control the current flowing through the motor’s winding, thereby enabling the user to choose the speed of the motor. Furthermore, the IRLR3636PBF can also be used in DC-DC converters in order to control the current passing through the input and output of the converter. This helps stabilise the power to help increase the efficiency of the DC-DC converter.In conclusion, the IRLR3636PBF is a popular device that is often used in various applications due to its versatile capabilities and its ability to control large amounts of current efficiently and safely.
The specific data is subject to PDF, and the above content is for reference
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