IRLR3705Z

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	130W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2900pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	66nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	8 mOhm @ 42A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	42A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRLR3705Z is a type of FET (Field Effect Transistor) which is widely used for a variety of purposes. It is a single gate MOSFET, meaning that it has a single gate electrode which is used to control the flow of current between the source and drain.The IRLR3705Z is primarily used for the purpose of power management in applications such as DC to DC converters, motor controls, low-noise power switching, DC-AC inverters and other circuit applications that require moderate-to-high voltage and current levels.The working principle of the IRLR3705Z is similar to that of other FETs. It operates by having a voltage difference across two electrodes in the form of a P-type region and an N-type region, which forms a P-N junction. This junction is used to generate a depletion region which allows for the controlled switching off of the device by lowering the gate voltage.When the voltage across the P-N junction is high enough, the device will be switched on, thus allowing current to flow from the source to the drain. When the voltage drops below a certain level, the current will be switched off, thus the device can be used as a switch.The IRLR3705Z can also be used in linear applications, where the device is used to regulate the flow of current between the source and the drain. This is achieved by controlling the voltage across the P-N junction, thus allowing for the controlled amplification of input signals.In summary, the IRLR3705Z is a single gate MOSFET which is primarily used for the purpose of power management in various electronics applications. Its working principle is based on the P-N junction which allows for switching and linear operation. This makes the IRLR3705Z an excellent choice for a wide range of applications which require moderate-to-high voltage and current levels for the purpose of power management.

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