Allicdata Part #: | IRLR3714ZTRL-ND |
Manufacturer Part#: |
IRLR3714ZTRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 37A DPAK |
More Detail: | N-Channel 20V 37A (Tc) 35W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR3714ZTRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.1nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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International Rectifier\'s IRLR3714ZTRL is an N-channel MOSFET (metal oxide semiconductor field-effect transistor) from their Hi-Rel family of products designed to withstand harsh environmental conditions. It is a part of the IRLR3714Z range, which is designed to provide robust and reliable operation under tough conditions, such as high or low temperatures, or wide voltage ranges. The IRLR3714ZTRL is intended to be used in demanding applications, such as high-performance amplifier circuits, motor drive circuits, and in industrial and automotive circuits.
The IRLR3714ZTRL is a single N-channel enhancement mode MOSFET which has an operating drain-source voltage (VDS) of up to 40V with a maximum drain current (ID) of 60A. It is a logic-level device and therefore does not need a gate-source voltage (VGS) greater than 5V to achieve its rated RDS(ON) of 12mΩ. This makes it a low-cost solution for applications with limited voltage supplies. Additionally, its internal \'body diode\' provides switching of higher voltages than its rated VDS, making it ideal for applications that require rapid switching times.
The main working principle of a MOSFET is based on the \'field-effect\' concept. That is, the electric field of a gate terminal controls the flow of current between the drain and source terminals. This is achieved by changing the electric field between the gate and source terminals, which induces an electrostatic force on the semiconductor material between the gate and source terminals. This in turn changes the conductivity of the channel, thereby allowing current to (or not to) flow between the drain and source terminals. The magnitude of the drain current depends on the applied gate-source voltage, the body-drain voltage and the threshold voltage at which the MOSFET starts to conduct.
The IRLR3714ZTRL offers many advantages over other MOSFETs, such as a low input capacitance, low gate-source charge, and high maximum input and output current. It is also capable of withstanding high temperatures, making it ideal for use in environments where high temperature can cause MOSFETs to fail prematurely. Additionally, the IRLR3714ZTRL has an optimal load-handling capability, meaning that it can withstand sudden and large current spikes when the load is engaging or disengaging, making it suitable for use in industries such as telecommunications and power supplies.
In conclusion, International Rectifier\'s IRLR3714ZTRL N-channel MOSFET is a versatile device designed to withstand extreme environmental conditions. It has many features that make it suitable for a wide range of applications, such as high-performance amplifier circuits, motor drive circuits, and industrial and automotive circuits. It is a robust and reliable device with an optimal load-handling capability, making it suitable for telecommunications and power supplies. Its field-effect principle makes it an ideal choice for applications with limited voltage supplies.
The specific data is subject to PDF, and the above content is for reference
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