Allicdata Part #: | IRLR3714ZTRPBF-ND |
Manufacturer Part#: |
IRLR3714ZTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 37A DPAK |
More Detail: | N-Channel 20V 37A (Tc) 35W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR3714ZTRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.1nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRLR3714ZTRPBF is a high-performance, extremely low-on-resistance, logic-level P-channel metal-oxide-semiconductor field-effect transistor (MOSFET). It is an ideal choice for use in a wide variety of applications where low on-resistance and high power efficiency is desired. This MOSFET has an on-resistance of only 37 mΩ, making it the perfect choice for applications requiring high current and low-voltage switching such as motor control, DC/DC converters, and LED lighting.
The IRLR3714ZTRPBF features a P-channel dual N-channel MOSFET with a Mark-Free ® Technology process. This process allows for extremely low gate charge and high efficiency DC operation. The device is constructed using a special dielectric-on-insulated (DIs) design, which improves device isolation and reduces capacitance. The device also features Schottky diodes, allowing for improved conduction and high-speed switching.
The IRLR3714ZTRPBF is an ideal choice for a wide variety of applications requiring high current and low-voltage switching. The device is capable of delivering up to 17A (25V) of source current with its remarkably low on-resistance of only 37 mΩ. This makes the device ideal for use in motor control applications such as DC servo motors and brushless motors. The device also features very low gate capacitance, allowing it to be used in high-speed switching applications such as DC/DC converters and high-efficiency power supplies. The device is also well-suited for use in LED lighting, where its low on-resistance and efficient operation can help to reduce overall system power consumption.
The IRLR3714ZTRPBF is a logic-level MOSFET, meaning that it requires a relatively low gate voltage to turn it on and off. This low threshold makes it particularly attractive for low-voltage systems, such as those driven by 3.3V or 5V logic. The device is also rated for pulse-operation, allowing it to be used in applications with pulsed loads or where higher-frequency operation is required. Additionally, the device utilizes a compact 3 lead SOT-223 package, which takes up very little board space and makes it well-suited for use in board mounted applications.
In summary, the IRLR3714ZTRPBF is a high-performance P-channel MOSFET with an extremely low on-resistance of 37 mΩ. This allows the device to deliver up to 17A (25V) of source current with high power efficiency. The device is well-suited for motor control, DC/DC converters, LED lighting, and a variety of high-speed switching applications. The device utilizes a compact 3 lead SOT-223 package and operates from a low gate voltage. The IRLR3714ZTRPBF is an excellent choice for any low-voltage switching application requiring low on-resistance and high power efficiency.
The specific data is subject to PDF, and the above content is for reference
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