Allicdata Part #: | IRLR3714ZTRR-ND |
Manufacturer Part#: |
IRLR3714ZTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 37A DPAK |
More Detail: | N-Channel 20V 37A (Tc) 35W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR3714ZTRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.1nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRLR3714ZTRR is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a low gate threshold voltage and very low on-resistance. It is an excellent choice for use in a wide range of applications, from automotive to consumer electronics. In this article, we will discuss the application field and working principle of the IRLR3714ZTRR.
IRLR3714ZTRR Application Fields
The IRLR3714ZTRR is suitable for a wide range of different applications including low-side switches, DC-DC converters, motor drivers, load switches, and OR-ing diodes. Automotive applications also make use of this MOSFET, as it can withstand temperatures of up to 175°C and features a maximum drain source voltage of 100V. A few examples of automotive applications include DC to DC converters, ECU protection, automotive lighting and motor drivers.
Working Principle of IRLR3714ZTRR
The IRLR3714ZTRR MOSFET is based on a vertical N-channel MOS structure which means that when a positive gate voltage is applied, electrons in the channel are attracted to the gate, inducing a conductive path between the drain and source. The device is normally off and when a voltage greater than the threshold voltage is applied across the gate to source, the MOSFET turns on, resulting in the maximum current (Id) flowing from the Drain to the Source. The IRLR3714ZTRR has a low gate threshold voltage, which means a relatively low voltage is needed for it to turn on, and it also has very low on-resistance, resulting in a high performance device.
In summary, the IRLR3714ZTRR is a N-channel MOSFET which is suitable for a wide range of applications, from automotive to consumer electronics. It features a low gate threshold voltage and very low on-resistance, meaning it turns on quickly and can handle large amounts of current. This makes it an excellent choice for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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