IRLR7833CPBF

Rds On (Max) @ Id, Vgs:	--
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	--
Power Dissipation (Max):	140W (Tc)
FET Feature:	--
Vgs (Max):	±20V
Vgs(th) (Max) @ Id:	--
Series:	--
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	140A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRLR7833CPBF is a single-gate field-effect transistor (FET). It belongs to the category of metal-oxide-semiconductor field-effect transistors (MOSFETs). The IRLR7833CPBF is very efficient in power saving, due to its low on-resistance in its RDS (ON) and having a fast switching speed. This makes this device suitable for switching applications in various kinds of consumer electronics, desktop PCs, and telecom applications.

Features

The IRLR7833CPBF is an N-Channel FET with a maximum drain to source voltage of 30 Volts and a maximum drain current of 8 Amps. It is rated at an On-resistance of 0.74 Ohms and a maximum Safe Operating Area of 0.83V. It features an avalanche energy rated at 41 mJ, which makes it well-suited for applications that need reliable switching at high currents. The IRLR7833CPBF has a low gate threshold voltage of 1.3V and a short circuit protection in the form of a Zener diode on its source terminal. Additional features include a power dissipation of 5.6W, an operating temperature of -55 to +150 degrees Celsius, a storage temperature of -55 to +150 degrees Celsius, and a minimum Thermal Resistance from the junction to ambient of 25 °C/W.

Application Areas

The IRLR7833CPBF is an ideal choice for many applications due to its fast switching speed, low RDS (ON), and high current ratings. Its low gate threshold voltage of 1.3V makes it suitable for applications that need to control low voltages. Some of its typical applications are high frequency switching, motor control, automotive power control systems, power supplies, and load switches.

Working Principle

The IRLR7833CPBF is an N-Channel FET that works on the principle of a voltage-controlled current source. This means that the current flowing through the FET depends on the voltage applied between the gate and the source. The way FETs work is by the voltage applied on the gate causing a thin insulating layer or “gate oxide” to form on the chip. This in turn controls the amount of current that can flow through the channel. When no voltage is applied on the gate, the FET is turned off and no current can flow through the channel.The IRLR7833CPBF also has a Zener diode connected to its source node, which helps to protect the chip from excessive current, by limiting the voltage across the FET. This helps to protect against shorts and over-currents, which can cause the FET to fail.

Conclusion

The IRLR7833CPBF is a single-gate FET that is ideal for applications that require fast switching and low RDS (ON). It provides power savings, fast switching, reliability, and good current control. The IRLR7833CPBF can be used in motor control, automotive power control systems, power supplies, and load switches. Its low gate threshold voltage and the inclusion of a Zener diode on its source terminal protect the chip from excessive current.

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