IRLR7833CTRRPBF

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The IRLR7833CTRRPBF is a transistor that belongs to the Transistors – FETs, MOSFETs – Single category. It is P-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and is generally used for low voltage switching applications.

This product is supplied in a (3)D-PAK configuration that improves thermal conduction and simplifies mounting on printed circuit boards. It has a low on-resistance of 0.77 milliohms which helps reduce power losses and its 3.2A continuous drain current increases its capability to handle large loads.

The IRLR7833CTRRPBF MOSFET is usually used in a variety of power switching applications including power supplies, voltage regulators, and motor drivers. It offers excellent switching performance for high-side and low-side applications where current should flow from drain to source.

The IRLR7833CTRRPBF MOSFET is a "logic-level" device, meaning it is highly sensitive to voltage. It can be driven from a lower voltage, and its threshold voltage is 4.5 V at 25 °C and 4.0 V at 100 °C. With a low threshold voltage, it requires less gate drive voltage for switching, making it ideal for low voltage switching applications.

The IRLR7833CTRRPBF also features a high threshold voltage with a maximum of 20V, making it suitable for applications where voltage transients are present. The device’s maximum drain-source breakdown voltage is 30V, which allows it to handle higher voltages while still providing reliable switching.

The IRLR7833CTRRPBF MOSFET offers a wide range of features and benefits. Its low on-resistance and low threshold voltage is ideal for low voltage systems and its high threshold voltage is great for applications with voltage transients. Additionally, its high drain-source breakdown voltage makes it suitable for higher voltage systems.

The IRLR7833CTRRPBF\'s working principle is based on the depletion-type of MOSFET. As the voltage applied to the gate is increased, it causes a depletion of the semiconductor between the gate and the drain. This reduces the current flowing between the gate and the drain and thusly changes the conducting state of the transistor.

The IRLR7833CTRRPBF offers many advantages such as its low on-resistance, low threshold voltage, high threshold voltage, and high drain-source breakdown voltage. Additionally, its 3D-PAK configuration improves thermal conduction and simplifies mounting on PCBs. All these features make it suitable for various low voltage and high voltage power switching applications.

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