IRLR8256PBF Allicdata Electronics
Allicdata Part #:

IRLR8256PBF-ND

Manufacturer Part#:

IRLR8256PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 81A DPAK
More Detail: N-Channel 25V 81A (Tc) 63W (Tc) Surface Mount D-Pa...
DataSheet: IRLR8256PBF datasheetIRLR8256PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 13V
FET Feature: --
Power Dissipation (Max): 63W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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IRLR8256PBF is a single-oxide insulated gate field-effect transistor (IGFET) and is commonly used in the field of power MOSFETs. It is developed and produced by International Rectifier Corporation and is the abbreviation of Insulated Gate Bipolar Transistor. It is considered to be a low I\_DS(on) with low gate charge technology.

The IRLR8256PBF has a blocked voltage rating of 800V and a relatively low on resistance of Rds(on) = 0.0046Ω. This design feature allows the device to be used in a wide range of low voltage applications such as low voltage power supplies, high speed switching devices and audio amplifiers.

The device is “enhancement mode” and has a numerical gate threshold value of 2.6 volts. This makes it suitable for low voltage operation and applications. The device has a specified Drain to Source Breakdown Voltage (BVDSS) of 80V. It has a gate source voltage rating VGS of ±20V and a typical turn-on/off time of 32ns/50ns.

The IRLR8256PBF is designed in such a way that it can handle high current pulses, so it is well-suited for switching power supply applications. It also has an ultra-low gate drive level of 4.5V. This helps reduce the gate size requirements and minimize switching losses. The low input capacitance of Ciss = 33.9pF and low output capacitance of Cout = 6.2pF make it well suited for high speed switching applications.

In terms of its function and operation, the IRLR8256PBF is a single-oxide insulated gate field-effect transistor. It is a three-terminal device which is used to regulate and control the flow of current in electronic circuits by means of changing the input voltage or gate voltage. The drain-source path is controlled by the voltage applied to the gate terminal. When the gate voltage is increased, the resistance between the drain and source decreases and more current can flow through the device when a voltage is applied to the drain terminal. When the gate voltage is decreased, the resistance between the drain and source increases, preventing current from flowing through the device.

The IRLR8256PBF can be used in a variety of applications and environments. These include switching power supplies, audio amplifiers, and high speed switching applications. It has a high performance and power handling capabilities. As a result, it is a reliable and cost-effective choice for use in a wide range of electronics projects and applications.

The specific data is subject to PDF, and the above content is for reference

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