Allicdata Part #: | IRLR8256PBF-ND |
Manufacturer Part#: |
IRLR8256PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 81A DPAK |
More Detail: | N-Channel 25V 81A (Tc) 63W (Tc) Surface Mount D-Pa... |
DataSheet: | IRLR8256PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 81A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1470pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 63W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IRLR8256PBF is a single-oxide insulated gate field-effect transistor (IGFET) and is commonly used in the field of power MOSFETs. It is developed and produced by International Rectifier Corporation and is the abbreviation of Insulated Gate Bipolar Transistor. It is considered to be a low I\_DS(on) with low gate charge technology.
The IRLR8256PBF has a blocked voltage rating of 800V and a relatively low on resistance of Rds(on) = 0.0046Ω. This design feature allows the device to be used in a wide range of low voltage applications such as low voltage power supplies, high speed switching devices and audio amplifiers.
The device is “enhancement mode” and has a numerical gate threshold value of 2.6 volts. This makes it suitable for low voltage operation and applications. The device has a specified Drain to Source Breakdown Voltage (BVDSS) of 80V. It has a gate source voltage rating VGS of ±20V and a typical turn-on/off time of 32ns/50ns.
The IRLR8256PBF is designed in such a way that it can handle high current pulses, so it is well-suited for switching power supply applications. It also has an ultra-low gate drive level of 4.5V. This helps reduce the gate size requirements and minimize switching losses. The low input capacitance of Ciss = 33.9pF and low output capacitance of Cout = 6.2pF make it well suited for high speed switching applications.
In terms of its function and operation, the IRLR8256PBF is a single-oxide insulated gate field-effect transistor. It is a three-terminal device which is used to regulate and control the flow of current in electronic circuits by means of changing the input voltage or gate voltage. The drain-source path is controlled by the voltage applied to the gate terminal. When the gate voltage is increased, the resistance between the drain and source decreases and more current can flow through the device when a voltage is applied to the drain terminal. When the gate voltage is decreased, the resistance between the drain and source increases, preventing current from flowing through the device.
The IRLR8256PBF can be used in a variety of applications and environments. These include switching power supplies, audio amplifiers, and high speed switching applications. It has a high performance and power handling capabilities. As a result, it is a reliable and cost-effective choice for use in a wide range of electronics projects and applications.
The specific data is subject to PDF, and the above content is for reference
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