IXFQ23N60Q Allicdata Electronics
Allicdata Part #:

IXFQ23N60Q-ND

Manufacturer Part#:

IXFQ23N60Q

Price: $ 8.74
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 23A TO-268(D3)
More Detail: N-Channel 600V 23A (Tc) Surface Mount TO-268
DataSheet: IXFQ23N60Q datasheetIXFQ23N60Q Datasheet/PDF
Quantity: 1000
1 +: $ 7.86240
Stock 1000Can Ship Immediately
$ 8.74
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Description

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The IXFQ23N60Q is a single N-channel MOSFET, developed and manufactured by Infineon. It is designed to handle a range of switching and power management functions in consumer electronics, industrial and automotive equipment.

The IXFQ23N60Q MOSFET is rated for a drain source voltage (VDS) of up to 600 V, a continuous drain current (ID) of 1.5 A and a power dissipation (PD) of 5.9 W. It is available in industry-standard SOT-223, SOT-89, and TO-220 packages, making it easy to install and use.

The IXFQ23N60Q is based on metal-oxide-semiconductor field-effect transistor (MOSFET) technology. This type of transistor is an effective and efficient way to switch and control current through a circuit. It does this by amplifying the original control signal and changing the current flow by modulating the electrical resistance of the transistor.

The IXFQ23N60Q MOSFET works by letting current flow effortlessly when it is turned on, and stopping the current flow as soon as it is turned off. This means that it can be used to act as an electronic switch. It is also suitable for applications where precise voltage and current regulation is required, such as in a power supply.

The IXFQ23N60Q MOSFET is well-suited for use in a variety of consumer electronics and automotive equipment, such as TVs, stereos, motor control systems and lighting systems. It can also be used in power management and voltage regulation applications. The MOSFET is designed for use in environments with operating temperatures between -55°C and 150°C.

In conclusion, the IXFQ23N60Q is a robust single N-channel MOSFET, specifically manufactured by Infineon for a range of applications. It is rated for a drain source voltage of 600 V and a continuous drain current of 1.5 A. It is suitable for a variety of switching and power management applications in consumer electronics, industrial, and automotive equipment.

The specific data is subject to PDF, and the above content is for reference

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