Allicdata Part #: | IXFQ50N60X-ND |
Manufacturer Part#: |
IXFQ50N60X |
Price: | $ 5.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 50A TO3P |
More Detail: | N-Channel 600V 50A (Tc) 660W (Tc) Through Hole TO-... |
DataSheet: | IXFQ50N60X Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 5.02005 |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 660W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4660pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 116nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 73 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFQ50N60X is a component in the XLN family of high voltage MOSFET transistors from IXYS Corporation. This component is a single MOSFET, which has been designed for use in a variety of high power applications. This component is particularly useful for applications where efficiency, high switching speed and high temperature operating capability are desired. The IXFQ50N60X component is a N-Channel depletion mode enhancement type MOSFET, ideal for applications requiring low on-state resistance and high power handling capability.
This component has a maximum drain-source voltage of 600 volts, a current gate charge rating of 1.6A and a specified 10.8mΩ on-state resistance rating. It also features a maximum source drain voltage (Vds) of 50 volts, a forward transconductance rating of 33S and a maximum drain current rating of 42A. The component also has a typical gate charge rating of 22nC and a maximum operating temperature rating of 175°C. This component is designed to offer excellent thermal stability and robust performance over the full temperature range.
The general working principle of the IXFQ50N60X component is achieved by the application of an electric field to a gate surface, creating a voltage and an electric field within the gate region. This electric field then modulates the amount of current that is able to flow from the source to the drain. This is known as the field-effect and is the basic concept behind the functioning of MOSFET transistors. The IXFQ50N60X component features a high on-state resistance, enabling it to be used in high power applications. Its robustness and capability to handle large amounts of power make it suitable for a variety of applications, such as motor control, power switching, and power supplies.
The IXFQ50N60X component is also particularly useful in specific applications. For example, it is suitable in high speed drive circuits and power management circuits thanks to its low switching speed and high current rating. Furthermore, it is also highly suitable for applications requiring high temperature operation, such as automotive power systems and high power lighting, due to its high temperature ratings. The component also offers excellent protection against overvoltage and reverse voltage, due to its integrated protection elements.
As the IXFQ50N60X component has such versatile capabilities, it is popular in a variety of industries, from automotive to industrial and consumer electronics. This component has excellent electrical characteristics, making it suitable for almost any application. It is also relatively easy to integrate into existing circuit designs, as its dimensions make it suitable for standard MOSFET packages.
In conclusion, the IXFQ50N60X component is a highly versatile component which is suitable for a range of applications, due to its low on-state resistance, excellent high power handling capability and robustness. The component also features excellent thermal stability and is easy to integrate into existing circuit designs. Thanks to these advantages, the IXFQ50N60X component is highly sought after in many industries, including automotive and industrial.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXFQ50N60P3 | IXYS | 5.58 $ | 139 | MOSFET N-CH 600V 50A TO3P... |
IXFQ26N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 26A TO-3... |
IXFQ22N60P3 | IXYS | 3.48 $ | 26 | MOSFET N-CH 600V 22A TO3P... |
IXFQ28N60P3 | IXYS | 4.1 $ | 55 | MOSFET N-CH 600V 28A TO3P... |
IXFQ30N60X | IXYS | 4.69 $ | 69 | MOSFET N-CH 600V 30A TO3P... |
IXFQ34N50P3 | IXYS | 5.14 $ | 58 | MOSFET N-CH 500V 34A TO-3... |
IXFQ50N50P3 | IXYS | 5.83 $ | 52 | MOSFET N-CH 500V 50A TO-3... |
IXFQ94N30P3 | IXYS | 7.08 $ | 46 | MOSFET N-CH 300V 94A TO-3... |
IXFQ72N20X3 | IXYS | 5.14 $ | 46 | 200V/72A ULTRA JUNCTION X... |
IXFQ60N25X3 | IXYS | 5.54 $ | 66 | MOSFET N-CHANNEL 250V 60A... |
IXFQ72N30X3 | IXYS | 5.88 $ | 42 | 300V/72A ULTRA JUNCTION X... |
IXFQ90N20X3 | IXYS | 5.88 $ | 30 | 200V/90A ULTRA JUNCTION X... |
IXFQ140N20X3 | IXYS | 7.57 $ | 30 | 200V/140A ULTRA JUNCTION ... |
IXFQ60N50P3 | IXYS | 5.58 $ | 135 | MOSFET N-CH 500V 60A TO3P... |
IXFQ120N25X3 | IXYS | 7.57 $ | 120 | MOSFET N-CHANNEL 250V 120... |
IXFQ10N80P | IXYS | 2.25 $ | 1000 | MOSFET N-CH 800V 10A TO-3... |
IXFQ26N50P3 | IXYS | 3.54 $ | 1000 | MOSFET N-CH 500V 26A TO-3... |
IXFQ21N50Q | IXYS | 5.56 $ | 1000 | MOSFET N-CH 500V 21A TO-3... |
IXFQ50N60X | IXYS | 5.58 $ | 1000 | MOSFET N-CH 600V 50A TO3P... |
IXFQ26N50 | IXYS | 6.24 $ | 1000 | MOSFET N-CH 500V 26A TO-3... |
IXFQ24N50Q | IXYS | 6.43 $ | 1000 | MOSFET N-CH 500V 24A TO-3... |
IXFQ60N60X | IXYS | 7.79 $ | 1000 | MOSFET N-CH 600V 60A TO3P... |
IXFQ23N60Q | IXYS | 8.74 $ | 1000 | MOSFET N-CH 600V 23A TO-2... |
IXFQ24N50P2 | IXYS | 2.77 $ | 1000 | 500V POLAR2 HIPERFETSN-Ch... |
IXFQ12N80P | IXYS | 2.83 $ | 1000 | MOSFET N-CH 800V 12A TO-3... |
IXFQ20N50P3 | IXYS | 3.07 $ | 31 | MOSFET N-CH 500V 20A TO-3... |
IXFQ24N60X | IXYS | 3.37 $ | 1000 | MOSFET N-CH 600V 24A TO-3... |
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