IXFQ28N60P3

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The IXFQ28N60P3 is a part of the FET family – a type of transistor known as a Field Effect Transistor or FET. The IXFQ28N60P3 is of the “Single” type; it contains a single source channel, a single drain channel, and one gate terminal within a single package. FETs like the IXFQ28N60P3 are elegantly simple switch-like components that offer very low on-resistance and high frequency performance in comparison with their BJT (Bipolar Junction Transistor) counterparts. FETs, noted as either N-Channel or P-Channel, are efficient, reliable and adaptive – and as such they have become increasingly popular as the transistor of choice for today’s industries.

The IXFQ28N60P3 is a N-Channel FET. N-Channel FETs have their source and drain connected in series, and the gate terminal provides the bias for the active semiconductor channel put in place between source and drain. When the gate is driven to a negative voltage relative to the source, the negative gate bias attracts mobile electrons causing the channel to become a low impedance region — allowing current to flow. In contrast, the Positive Gate-Source bias diminishes the region’s conductive channel and drains the current, keeping the FET in its off state. All N-Channel FETs share this behavior.

The IXFQ28N60P3 is a power MOSFET – one specifically designed for high voltage, low current operations. Power FETs are best suited for switching applications that require high breakdown voltages, greater than 100 V. They are commonly used in motor control systems and lighting control applications, where fast acting command switching and dynamic current control is needed.

The IXFQ28N60P3 features a depletion-mode enhancement-type MOSFET and uses a unique N-Channel depletion field-effect technology. The device operates with gate-source voltage (VGS) ratings of -25 V – +15 V and can handle drain-source voltages (VDS) from 0 V-to-600 V. It has an ON-resistance of 28 ohms and 500 mA current ratings for both types of supply rails. The device is also equipped with a low-threshold drive capability, meaning it can switch at gate-source voltage levels as low as 2 V.

When applying the IXFQ28N60P3, it is important to consider the gate-source and gate-drain capacitances, which determines the switching times of the FET. It is also essential to select an appropriate supply rail in order to ensure adequate current through the device. The IXFQ28N60P3 is capable of delivering high performance within a range of light to heavy duty DC (Direct Current) switching applications, and its relaxed switching requirements – along with its impressive current ratings – make it an invaluable component within the realm of industrial power control.

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