IXFQ26N50 Allicdata Electronics
Allicdata Part #:

IXFQ26N50-ND

Manufacturer Part#:

IXFQ26N50

Price: $ 6.24
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 26A TO-30
More Detail: N-Channel 500V 26A (Tc) Through Hole TO-3P
DataSheet: IXFQ26N50 datasheetIXFQ26N50 Datasheet/PDF
Quantity: 1000
30 +: $ 5.61414
Stock 1000Can Ship Immediately
$ 6.24
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFQ26N50 is a fast, high-current, N-Channel MOSFET transistor specifically designed for high-speed switching applications. It is ideal for use in automotive, industrial, and consumer electronics applications.

The IXFQ26N50 is offered in a compact SO-8 package with an exposed thermal pad. The package is small enough to fit even the most cramped applications, and the exposed thermal pad facilitates efficient heat dissipation. The low thermal resistance enables the IXFQ26N50 to withstand a steady-state current of up to 26A and a peak current of up to 30A.

The IXFQ26N50 is designed to provide superior switching characteristics. Its fast switching and low on-resistance enable it to meet the most demanding application requirements. The exceptionally low "body-diode" forward-voltage drop ensures that the power dissipation is kept to a minimum. Moreover, the IXFQ26N50 is protected from static discharge and can handle voltage transients up to 30V.

The IXFQ26N50 is a versatile device. It can be used in a range of different applications including load switching, motor control, and power supplies. Furthermore, it can be used as a switch in a range of different circuits such as switch-mode power supplies, hot-swap power supplies, DC/DC converters, and general-purpose on/off switches. It can also be used as a voltage-controlled switch in ROS or FET Driver circuits.

The IXFQ26N50 works according to the basic principles of a MOSFET. When no voltage is applied to the gate, the drain and source terminals are isolated from each other. When a voltage is applied to the gate, the drain and source terminals become connected, allowing current to flow between them. The drain-source on-resistance is determined by the voltage applied to the gate. By controlling the voltage on the gate, the current flow between the drain and source can be controlled.

In addition to its impressive performance characteristics, the IXFQ26N50 is also very cost-effective. It is easily available at competitive prices, making it a great choice for cost-conscious designers. Furthermore, the IXFQ26N50 comes with a variety of innovative features such as short-circuit protection, over-temperature protection, and ESD protection.

The IXFQ26N50 is a great choice for engineers looking for a fast, high-current, N-Channel MOSFET transistor for their next project. With its impressive performance, high current handle, and small package size, the IXFQ26N50 is sure to exceed expectations.

The specific data is subject to PDF, and the above content is for reference

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