IXFQ94N30P3 Allicdata Electronics
Allicdata Part #:

IXFQ94N30P3-ND

Manufacturer Part#:

IXFQ94N30P3

Price: $ 7.08
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 94A TO-3P
More Detail: N-Channel 300V 94A (Tc) 1040W (Tc) Through Hole TO...
DataSheet: IXFQ94N30P3 datasheetIXFQ94N30P3 Datasheet/PDF
Quantity: 46
1 +: $ 6.43230
30 +: $ 5.27247
120 +: $ 4.75818
510 +: $ 3.98656
Stock 46Can Ship Immediately
$ 7.08
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1040W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5510pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 36 mOhm @ 47A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFQ94N30P3 type of transistor is a field-effect transistor that belongs to the single output transistor family. It is a type of transistor designed to be used in various types of applications such as amplifying signals and combining circuits. This type of transistor is also known as a metal-oxide-semiconductor field-effect transistor (MOSFET).

The IXFQ94N30P3 transistor is a metal-oxide-semiconductor field-effect transistor that is applicable in many applications such as power conversion, voltage and current control, power management, and pulse switching circuits. It is also used in applications where fast operating speeds, low power, and low gate charges are needed. The device is also used for current control applications, as it has the ability to handle large currents and can be used as a switching device in circuits. The transistor has a relatively low on-resistance and is often used as a low impedance switch and as an input stage for switching regulators.

The IXFQ94N30P3 FET has a nominal drain-source voltage of 30V and a continuously current rating of 30A. The device is also rated for an RDS( on ) rating of 0.800 ohms. This type of FET also has a reverse drain-source leakage current of less than 200 nA. The device also features low gate thresholds, so that it can operate quickly.

The working principle of the IXFQ94N30P3 is much like other MOSFETs. The main difference between this type of transistor and other MOSFETs is that it features a low on-resistance and is able to handle high currents with low gate charge. The working principle of the IXFQ94N30P3 involves a channel between the source and the drain being created when a gate voltage is applied. This channel allows current to flow from the source to the drain, when the gate voltage is applied.

The IXFQ94N30P3 transistor is widely used in power conversion, voltage and current control, power management and pulse switching circuits. The device is ideal for use in applications where high power needs to be switched quickly and reliably with low gate charge and low on-resistance. It is also suitable for use in controlling large current flows.

In conclusion, the IXFQ94N30P3 is a metal-oxide-semiconductor field-effect transistor (MOSFET) that is able to handle large currents and can be used as a switching device in circuits. The device also has a low on-resistance and is ideal for use in applications where fast operating speeds and low power are needed. It is also ideal for current control applications as it can handle high currents with low gate charges. The IXFQ94N30P3 FET is widely used in power conversion, voltage and current control, power management, and pulse switching circuits.

The specific data is subject to PDF, and the above content is for reference

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