Allicdata Part #: | IXFQ94N30P3-ND |
Manufacturer Part#: |
IXFQ94N30P3 |
Price: | $ 7.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 300V 94A TO-3P |
More Detail: | N-Channel 300V 94A (Tc) 1040W (Tc) Through Hole TO... |
DataSheet: | IXFQ94N30P3 Datasheet/PDF |
Quantity: | 46 |
1 +: | $ 6.43230 |
30 +: | $ 5.27247 |
120 +: | $ 4.75818 |
510 +: | $ 3.98656 |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1040W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5510pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 102nC @ 10V |
Series: | HiPerFET™, Polar3™ |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 47A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 94A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IXFQ94N30P3 type of transistor is a field-effect transistor that belongs to the single output transistor family. It is a type of transistor designed to be used in various types of applications such as amplifying signals and combining circuits. This type of transistor is also known as a metal-oxide-semiconductor field-effect transistor (MOSFET).
The IXFQ94N30P3 transistor is a metal-oxide-semiconductor field-effect transistor that is applicable in many applications such as power conversion, voltage and current control, power management, and pulse switching circuits. It is also used in applications where fast operating speeds, low power, and low gate charges are needed. The device is also used for current control applications, as it has the ability to handle large currents and can be used as a switching device in circuits. The transistor has a relatively low on-resistance and is often used as a low impedance switch and as an input stage for switching regulators.
The IXFQ94N30P3 FET has a nominal drain-source voltage of 30V and a continuously current rating of 30A. The device is also rated for an RDS( on ) rating of 0.800 ohms. This type of FET also has a reverse drain-source leakage current of less than 200 nA. The device also features low gate thresholds, so that it can operate quickly.
The working principle of the IXFQ94N30P3 is much like other MOSFETs. The main difference between this type of transistor and other MOSFETs is that it features a low on-resistance and is able to handle high currents with low gate charge. The working principle of the IXFQ94N30P3 involves a channel between the source and the drain being created when a gate voltage is applied. This channel allows current to flow from the source to the drain, when the gate voltage is applied.
The IXFQ94N30P3 transistor is widely used in power conversion, voltage and current control, power management and pulse switching circuits. The device is ideal for use in applications where high power needs to be switched quickly and reliably with low gate charge and low on-resistance. It is also suitable for use in controlling large current flows.
In conclusion, the IXFQ94N30P3 is a metal-oxide-semiconductor field-effect transistor (MOSFET) that is able to handle large currents and can be used as a switching device in circuits. The device also has a low on-resistance and is ideal for use in applications where fast operating speeds and low power are needed. It is also ideal for current control applications as it can handle high currents with low gate charges. The IXFQ94N30P3 FET is widely used in power conversion, voltage and current control, power management, and pulse switching circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXFQ50N60P3 | IXYS | 5.58 $ | 139 | MOSFET N-CH 600V 50A TO3P... |
IXFQ26N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 26A TO-3... |
IXFQ22N60P3 | IXYS | 3.48 $ | 26 | MOSFET N-CH 600V 22A TO3P... |
IXFQ28N60P3 | IXYS | 4.1 $ | 55 | MOSFET N-CH 600V 28A TO3P... |
IXFQ30N60X | IXYS | 4.69 $ | 69 | MOSFET N-CH 600V 30A TO3P... |
IXFQ34N50P3 | IXYS | 5.14 $ | 58 | MOSFET N-CH 500V 34A TO-3... |
IXFQ50N50P3 | IXYS | 5.83 $ | 52 | MOSFET N-CH 500V 50A TO-3... |
IXFQ94N30P3 | IXYS | 7.08 $ | 46 | MOSFET N-CH 300V 94A TO-3... |
IXFQ72N20X3 | IXYS | 5.14 $ | 46 | 200V/72A ULTRA JUNCTION X... |
IXFQ60N25X3 | IXYS | 5.54 $ | 66 | MOSFET N-CHANNEL 250V 60A... |
IXFQ72N30X3 | IXYS | 5.88 $ | 42 | 300V/72A ULTRA JUNCTION X... |
IXFQ90N20X3 | IXYS | 5.88 $ | 30 | 200V/90A ULTRA JUNCTION X... |
IXFQ140N20X3 | IXYS | 7.57 $ | 30 | 200V/140A ULTRA JUNCTION ... |
IXFQ60N50P3 | IXYS | 5.58 $ | 135 | MOSFET N-CH 500V 60A TO3P... |
IXFQ120N25X3 | IXYS | 7.57 $ | 120 | MOSFET N-CHANNEL 250V 120... |
IXFQ10N80P | IXYS | 2.25 $ | 1000 | MOSFET N-CH 800V 10A TO-3... |
IXFQ26N50P3 | IXYS | 3.54 $ | 1000 | MOSFET N-CH 500V 26A TO-3... |
IXFQ21N50Q | IXYS | 5.56 $ | 1000 | MOSFET N-CH 500V 21A TO-3... |
IXFQ50N60X | IXYS | 5.58 $ | 1000 | MOSFET N-CH 600V 50A TO3P... |
IXFQ26N50 | IXYS | 6.24 $ | 1000 | MOSFET N-CH 500V 26A TO-3... |
IXFQ24N50Q | IXYS | 6.43 $ | 1000 | MOSFET N-CH 500V 24A TO-3... |
IXFQ60N60X | IXYS | 7.79 $ | 1000 | MOSFET N-CH 600V 60A TO3P... |
IXFQ23N60Q | IXYS | 8.74 $ | 1000 | MOSFET N-CH 600V 23A TO-2... |
IXFQ24N50P2 | IXYS | 2.77 $ | 1000 | 500V POLAR2 HIPERFETSN-Ch... |
IXFQ12N80P | IXYS | 2.83 $ | 1000 | MOSFET N-CH 800V 12A TO-3... |
IXFQ20N50P3 | IXYS | 3.07 $ | 31 | MOSFET N-CH 500V 20A TO-3... |
IXFQ24N60X | IXYS | 3.37 $ | 1000 | MOSFET N-CH 600V 24A TO-3... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...