Allicdata Part #: | IXFQ24N50P2-ND |
Manufacturer Part#: |
IXFQ24N50P2 |
Price: | $ 2.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 500V POLAR2 HIPERFETS |
More Detail: | N-Channel 500V 24A (Tc) 480W (Tc) Through Hole TO-... |
DataSheet: | IXFQ24N50P2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 2.49417 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2890pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFQ24N50P2 is a field-effect transistor (FET) designed for a range of high-performance electronic applications. It is a N-channel enhancement mode, low-power, low-voltage IGBT, designed to operate at a drain to source voltage of 150V or less, and a drain current of 20A or less. IXFQ24N50P2 is suitable for motor control, switch-mode power conversion, home appliance control, etc.
Field Effect Transistors (FETs) are a type of transistor where the electric current passing through the device is controlled by an electric field. The gate terminal of a FET is insulated from the other two terminals (source and drain) and the electric current passing through the device is regulated by an electric field applied to the gate terminal. FETs are a more efficient way to control current than the traditional bipolar junction transistors and have several advantages over them, including higher current gain, low power dissipation, and superior switching speed.
The IXFQ24N50P2 has an advanced process technology which keeps it optimized for high efficiency and high-frequency operation. In terms of its switched electrical characteristics, it has a low gate-threshold voltage and a low On-resistance at low gate-to-source voltages. These characteristics make it ideal for high-frequency circuits, such as DC-DC converters, motor control circuits, and motor drives.
The IXFQ24N50P2 operates in the enhancement mode, which means that the FET channel is off when no gate voltage is applied. When a positive gate voltage is applied, the FET channel turns on and allows current to flow from source to drain. When the gate voltage is increased further, the FET channel turns on more strongly and the drain current is increased.
The operation of the IXFQ24N50P2 is further enhanced by its advanced process technology, which makes it capable of withstanding higher temperature operation and providing higher drain-to-source breakdown voltage, improved robustness to short circuit conditions, and increased channel length modulation. It also features excellent immunity to ESD and latch-up.
The IXFQ24N50P2 is an ideal choice for high-performance switch-mode power conversion, home appliance control, and motor control applications. Its advanced process technology and enhanced characteristics make it an excellent choice for these applications. It is an excellent choice for designers who need a high-performance and cost-effective solution for their power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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