IXFQ90N20X3

Gate Charge (Qg) (Max) @ Vgs:	78nC @ 10V
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	390W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5420pF @ 25V
Vgs (Max):	±20V
Series:	HiPerFET™
Vgs(th) (Max) @ Id:	4.5V @ 1.5mA
Rds On (Max) @ Id, Vgs:	12.8 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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IXFQ90N20X3 is an N-channel enhancement-mode field-effect transistor (FET) developed by IXYS. It consists of an insulated gate, a voltage source and a drain.The transistor is particularly suitable for use in high voltage, high speed power switching circuits, high speed factor and server applications requiring high frequency conversion rate.The Features and Benefits of IXFQ90N20X3The IXFQ90N20X3 has several features that make it an attractive device. It has a low on-resistance, a low input and output capacitance, and a wide operating frequency range. It can also handle high voltage and power switching with minimal switching losses. Additionally, it has a wide temperature range, a low gate charge, and low gate-source and gate-drain capacitances.Application FieldIXFQ90N20X3 transistors are mainly used in power switching applications, such as for motor control, load switching, and switching power supplies. They are also used in high-voltage, high-current power amplifier circuits, high-speed switching power supplies, and in high frequency switching applications.Working PrincipleIXFQ90N20X3 transistors consist of an insulated gate, a voltage source and a drain. When a positive voltage is applied to the gate, it creates a current path between the source and the drain and a conduction channel is formed in the transistor. This allows current to flow from the source to the drain. When a negative voltage is applied to the gate, the conduction channel is closed and no current flows.ConclusionThe IXFQ90N20X3 is a high-speed, high-voltage N-channel enhancement-mode FET, suitable for use in power switching and high-frequency switching applications. It has several features which make it preferable to other competing FETs, such as low on-resistance, low input and output capacitances, and wide operating frequency range; and it has the ability to handle high voltage and power switching with minimal losses.

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