IXFQ50N50P3 Allicdata Electronics
Allicdata Part #:

IXFQ50N50P3-ND

Manufacturer Part#:

IXFQ50N50P3

Price: $ 5.83
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 50A TO-3P
More Detail: N-Channel 500V 50A (Tc) 960W (Tc) Through Hole TO-...
DataSheet: IXFQ50N50P3 datasheetIXFQ50N50P3 Datasheet/PDF
Quantity: 52
1 +: $ 5.30460
30 +: $ 4.35162
120 +: $ 3.92715
510 +: $ 3.29032
1020 +: $ 2.86576
Stock 52Can Ship Immediately
$ 5.83
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4335pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 120 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFQ50N50P3 is a type of field-effect transistor (FET) which belongs to a group of MOSFETs, or metal-oxide-semiconductor field-effect transistors. It is a single-pole single-throw (SPST) device and is primarily used as a switch. As such, its main purpose is to open or close a circuit. This type of transistor is used in many electronic appliances, devices, and circuits.

TheIXFQ50N50P3 operates on the principle of controlling the current flow in a circuit by applying a voltage to a gate. The gate acts as a control terminal which, when energized, creates a channel between the source and drain terminals. The channel acts as a gate for a current flow in the circuit. The current flow is controlled by varying the voltage applied to the gate.

This type of FET is typically used in applications that require high-power switching capabilities. It can be used as a switch in circuit breakers, relays, and surge protectors. The IXFQ50N50P3 is also used in high-power audio applications, such as amplifiers, high-power amplifiers, and power supplies. The IXFQ50N50P3 is also used in digital circuits, such as microprocessors, memory chips, and logic gates.

The IXFQ50N50P3 is a highly efficient device, with a switching capability of up to 20A. It also has high-current capacity and low on-state resistance. The device has good temperature stability, high switching frequency and good noise suppression characteristics. The IXFQ50N50P3 has an operating temperature range of -55 to +150°C.

The process of mounting the IXFQ50N50P3 is relatively simple. The device is usually mounted on a heat sink to dissipate the heat generated during operation. The heat sink must be securely fastened to the device in order to ensure that the transistor is sturdy and that it is positioned correctly. Proper mounting of the IXFQ50N50P3 is necessary in order to achieve maximum switching performance and efficiency.

The IXFQ50N50P3 has a number of advantages over other types of FETs, such as its low threshold voltage, which makes it ideal for high-power applications. Its fast switching time makes it ideal for high-speed data and signal processing, while its low on-state resistance makes it suitable for low current applications. The device also has a low output noise and a relatively high power dissipation capacity. In addition, it has a wide operating temperature range and is highly rugged and reliable.

In conclusion, the IXFQ50N50P3 is a versatile field-effect transistor which is suitable for a wide range of applications. Its fast switching capabilities and excellent efficiency make it a popular choice for high-power switching applications. The IXFQ50N50P3 is easy to mount and provides excellent heat dissipation and reliability, making it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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