Allicdata Part #: | IXFQ24N60X-ND |
Manufacturer Part#: |
IXFQ24N60X |
Price: | $ 3.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 24A TO-3P |
More Detail: | N-Channel 600V 24A (Tc) 400W (Tc) Through Hole TO-... |
DataSheet: | IXFQ24N60X Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 3.03209 |
Vgs(th) (Max) @ Id: | 4.5V @ 2.5mA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1910pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 175 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFQ24N60X is a high voltage, high-speed power MOSFET developed using advanced trench technology These power MOSFETs are ideal for automotive as well as industrial applications and have a wide range of applications. This article will discuss the application field of the IXFQ24N60X, as well as its working principle.
Application Field
The IXFQ24N60X is a high voltage, high-speed power MOSFET designed for the automotive industry, industrial applications, and other high-power applications. This device has a low on-resistance of about 8mΩ and is capable of handling currents of up to -24A. Due to its low on-resistance, this device is suitable for use as a driver, which makes it ideal for applications that require high-efficiency power conversion, such as automotive powertrain control, renewable energy systems, and industrial motor control.
The IXFQ24N60X can also be used in the automotive industry for such applications as engine control, transmission control, and powertrain control. Additionally, this device can be used for industrial applications, such as motor control, high-speed switching, and power conversion. This device is also suitable for use in battery management systems, as well as for such high-power applications as the control of increased load and current.
Working Principle
The IXFQ24N60X is a type of metal-oxide-semiconductor field-effect transistor (MOSFET), also known as an insulated gate bipolar transistor (IGBT). This device is constructed using trenches that are filled with metal oxide. When a potential difference is applied across the gate and source terminals, the electrons in the metal-oxide layer accumulate and create a conductive path between the source and drain, allowing current to flow. The IXFQ24N60X is a unipolar transistor, which means that it has only one transistor type.
The IXFQ24N60X is able to operate at high frequencies due to its low on-resistance, enabling it to quickly switch from an on-state to an off-state. Additionally, this device is capable of handling relatively high voltages and currents, which makes it well-suited for applications involving power conversion and motor control. This device is also capable of dissipating energy quickly, which reduces the amount of heat generated and improves thermal characteristics.
Conclusion
The IXFQ24N60X is a high voltage, high-speed MOSFET developed using advanced trench technology. This power MOSFET is suitable for use in automotive as well as industrial applications and is capable of handling currents of up to -24A. This device is constructed using trenches that are filled with metal oxide and uses a unipolar transistor design. Additionally, this device is capable of dissipating energy quickly, reducing the amount of heat generated and improving thermal characteristics.
The specific data is subject to PDF, and the above content is for reference
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