IXFQ30N60X Allicdata Electronics
Allicdata Part #:

IXFQ30N60X-ND

Manufacturer Part#:

IXFQ30N60X

Price: $ 4.69
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600V 30A TO3P
More Detail: N-Channel 600V 30A (Tc) 500W (Tc) Through Hole TO-...
DataSheet: IXFQ30N60X datasheetIXFQ30N60X Datasheet/PDF
Quantity: 69
1 +: $ 4.25880
30 +: $ 3.42321
120 +: $ 3.11898
510 +: $ 2.52561
1020 +: $ 2.13003
Stock 69Can Ship Immediately
$ 4.69
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFQ30N60X is a single N-Channel MOSFET, a type of transistor that uses charge carriers to control the current flow between the source and drain. MOSFETs are commonly used in high power applications and are often found in switching circuits because of their low on-resistance, high frequency operation, and good efficiency. The IXFQ30N60X is designed for applications up to 30 Amps and 600 Volts. It is also capable of operating at speeds up to 100kHz.

In a single N-Channel MOSFET, there are three terminals - the source, gate, and drain. The source terminal supplies current to the channel, while the gate is used to control the current. The drain terminal is where the current exits the channel. When a voltage is applied to the gate terminal, it creates an electric field that modulates the conductivity of the channel, allowing current to flow from the source to the drain. This field-effect principle is essential for powering large circuits.

The IXFQ30N60X is designed for high-power applications requiring low on-resistance, such as motor controls, switching power supplies, lighting control, and more. It is capable of delivering a low forward voltage drop and a high-switching frequency of 100kHz. The device is constructed from a strong metal oxide semiconductor (MOS) substrate and features a low-capacitance diode protection to help prevent accidental charge and current flow. The gate is also protected by a special internal gate-solder region.

The IXFQ30N60X is an excellent choice for many different power applications. It has a wide range of operating temperatures (-55°C to +175°C), a low on-resistance, and high switching frequency of up to 100kHz. It is constructed from a strong metal oxide semiconductor (MOS) substrate and offers low-capacitance diode protection to help prevent accidental charge and current flow. It is designed for applications up to 30 Amps and 600 Volts.

In conclusion, the IXFQ30N60X is an ideal choice for high-power applications that require low on-resistance and a high switching frequency. It is constructed from a strong metal oxide semiconductor (MOS) substrate and features low-capacitance diode protection to help prevent accidental charge and current flow. The device is also designed for applications up to 30 Amps and 600 Volts, making it perfect for many different power applications.

The specific data is subject to PDF, and the above content is for reference

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