IXGP12N60B Allicdata Electronics
Allicdata Part #:

IXGP12N60B-ND

Manufacturer Part#:

IXGP12N60B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 24A 100W TO220AB
More Detail: IGBT 600V 24A 100W Through Hole TO-220AB
DataSheet: IXGP12N60B datasheetIXGP12N60B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 500µJ (off)
Base Part Number: IXG*12N60
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 12A, 18 Ohm, 15V
Td (on/off) @ 25°C: 20ns/150ns
Gate Charge: 32nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 100W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Current - Collector Pulsed (Icm): 48A
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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The IXGP12N60B is a type of insulated gate bipolar transistor (IGBT). This transistor is manufactured by IXYS and is part of the IGBT 600 V series. The IXGP12N60B is a single-phase transistor and is used in a variety of applications.

Applications of IXGP12N60B

The IXGP12N60B is used in many applications, including power factor correction systems, motor control, power supplies, and solar panel inverters. This transistor can be used in a wide range of applications due to its ability to handle high current and voltage.

The IXGP12N60B can be used in motor control applications, such as for induction, permanent magnet, and servo motors. This transistor can be used in a wide range of motor control systems, including automotive, industrial, and aerospace systems.

This transistor can also be used in various power factor correction systems, such as for buck and boost converters, power line filters, and switch-mode power supplies. The IXGP12N60B can also be used in uninterruptible power supplies and solar panel inverters.

Working Principle of IXGP12N60B

The IXGP12N60B is an insulated gate bipolar transistor, meaning it utilizes both the properties of a bipolar transistor and the capabilities of a metal oxide semiconductor field-effect transistor (MOSFET). In the IXGP12N60B, the bipolar transistor portion is responsible for conducting current in either direction, while the MOSFET portion allows current in one direction only. This dual mechanism ensures efficient operation, low switching losses, and fast switching times.

The gate control mechanism of the IXGP12N60B is also unique compared to other types of transistors. This transistor utilizes insulated gate control, meaning the gate electrode is insulated from the channel with a thin layer of dielectric. This reduces the capacitance between the gate and the channel and allows for fast switching times.

The IXGP12N60B is designed to handle high current and voltage and can operate at peak voltages up to 600 V. This high voltage rating makes this transistor well-suited for use in a variety of applications, including power factor correction, motor control, and solar panel inverters.

Conclusion

The IXGP12N60B is a type of insulated gate bipolar transistor (IGBT). It is manufactured by IXYS and is used in a variety of applications, such as power factor correction, motor control, and solar panel inverters. This transistor is part of the IGBT 600 V series and can handle high current and voltage.

The IXGP12N60B is unique in that it utilizes insulated gate control. This reduces the capacitance between the gate and the channel and allows for fast switching times. This transistor is well-suited for use in a variety of applications, including power factor correction, motor control, and solar panel inverters.

The specific data is subject to PDF, and the above content is for reference

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