Allicdata Part #: | IXGP2N100-ND |
Manufacturer Part#: |
IXGP2N100 |
Price: | $ 1.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1000V 4A 25W TO220AB |
More Detail: | IGBT 1000V 4A 25W Through Hole TO-220AB |
DataSheet: | IXGP2N100 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
50 +: | $ 1.63724 |
Power - Max: | 25W |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 800V, 2A, 150 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/300ns |
Gate Charge: | 7.8nC |
Input Type: | Standard |
Switching Energy: | 560µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 2A |
Current - Collector Pulsed (Icm): | 8A |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 1000V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IXGP2N100 is a type of transistor in the group known as "Insulated Gate Bipolar Transistors" (IGBTs). It belongs to the “Single” category of IGBTs. It is used in a variety of applications including power supply and high-frequency switching applications. The device can be utilized in power converter systems OR power conditioning circuits, such as UPS systems and solar inverters. In addition, the device can be used in other applications such as traction, welding equipment, motor control, robotics, high-voltage conversion, and high-frequency switching.
Let us now look at the working principle of the IXGP2N100. It is a type of transistor, which works on the principle of an electromechanical field effect. The device is based on a voltage-controlled insulated gate transistor (IGT). The IGT consists of a number of P-type and N-type layers. A voltage is applied to the gate of the IGT, which creates an electric field. This electric field creates a barrier between the P and N layers, which controls the flow of current on either side. The barrier between the layer also gives rise to the voltage drop across the transistor, which can be used to control the amount of current flowing through the transistor.
The IXGP2N100 is a low on-resistance device with low switching losses and low noise. It has a breakdown voltage of 600V, a maximum collector-emitter voltage of 100V, and a maximum current of 28A. The device is available in both DIP (Dual Inline Package) and SMD (Surface Mount Device) packages. It also has a high power dissipation capability of 196W and a wide temperature range from -55°C to +150°C, which makes it a suitable choice for harsh industrial environments.
The IXGP2N100 offers a number of features that make it suitable for a wide range of applications. These features include lower on-state power loss, higher switching frequency, faster and smoother switching, higher voltage conduction, and a high breakdown voltage. Its high-speed switching performance makes it suitable for use in power switch circuits. Its fast switching and high voltage conduction capabilities make it an ideal choice for applications such as DC to DC and AC to DC convertors. Its high signal transmission capability also makes it an ideal choice for applications that require signal transmission with precision and accuracy.
The IXGP2N100 also offers a number of other benefits, such as low power loss, high reliability, and long life. Its low power loss makes it suitable for applications where there is a need for energy efficiency, such as industrial automation and other high-frequency switching applications. Its high reliability ensures a long life and makes it an ideal choice for applications where high reliability is critical. Its thermal performance also ensures that it can operate over a wide temperature range.
In conclusion, the IXGP2N100 is an excellent choice for a wide range of applications. It is a low on-resistance device with low switching losses, high voltage conduction, and high power dissipation. It is an ideal choice for applications such as DC to DC and AC to DC converters, power switch circuits, high-frequency switching applications, and industrial automation. Its wide temperature range and thermal performance also make it suitable for use in harsh industrial environments.
The specific data is subject to PDF, and the above content is for reference
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IXGP12N120A2 | IXYS | 1.77 $ | 1000 | IGBT 1200V 24A 75W TO220I... |
IXGP12N120A3 | IXYS | 1.77 $ | 1000 | IGBT 1200V 22A 100W TO220... |
IXGP2N100 | IXYS | 1.8 $ | 1000 | IGBT 1000V 4A 25W TO220AB... |
IXGP30N60B2 | IXYS | 1.95 $ | 1000 | IGBT 600V 70A 190W TO220I... |
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IXGP12N100 | IXYS | 2.13 $ | 1000 | IGBT 1000V 24A 100W TO220... |
IXGP12N100A | IXYS | 2.13 $ | 1000 | IGBT 1000V 24A 100W TO220... |
IXGP30N60C3D4 | IXYS | 2.21 $ | 1000 | IGBT 600V 60A 220W TO220A... |
IXGP48N60C3 | IXYS | 2.43 $ | 1000 | IGBT 600V 75A 300W TO220A... |
IXGP36N60A3 | IXYS | -- | 1000 | IGBTIGBT PT 600V 220W Th... |
IXGP12N60C | IXYS | 0.0 $ | 1000 | IGBT 600V 24A 100W TO220I... |
IXGP12N60CD1 | IXYS | 0.0 $ | 1000 | IGBT 600V 24A 100W TO220I... |
IXGP16N60B2 | IXYS | 0.0 $ | 1000 | IGBT 600V 40A 150W TO220I... |
IXGP16N60B2D1 | IXYS | 0.0 $ | 1000 | IGBT 600V 40A 150W TO220I... |
IXGP16N60C2 | IXYS | 0.0 $ | 1000 | IGBT 600V 40A 150W TO220I... |
IXGP16N60C2D1 | IXYS | -- | 1000 | IGBT 600V 40A 150W TO220I... |
IXGP30N60C2 | IXYS | 0.0 $ | 1000 | IGBT 600V 70A 190W TO220I... |
IXGP7N60B | IXYS | -- | 1000 | IGBT 600V 14A 54W TO220IG... |
IXGP7N60BD1 | IXYS | 0.0 $ | 1000 | IGBT 600V 14A 80W TO220IG... |
IXGP7N60C | IXYS | 0.0 $ | 1000 | IGBT 600V 14A 54W TO220IG... |
IXGP7N60CD1 | IXYS | 0.0 $ | 1000 | IGBT 600V 14A 75W TO220IG... |
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