Allicdata Part #: | IXGP48N60C3-ND |
Manufacturer Part#: |
IXGP48N60C3 |
Price: | $ 2.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 75A 300W TO220AB |
More Detail: | IGBT PT 600V 75A 300W Through Hole TO-220AB |
DataSheet: | IXGP48N60C3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
50 +: | $ 2.20286 |
Power - Max: | 300W |
Base Part Number: | IXG*48N60 |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 400V, 30A, 3 Ohm, 15V |
Td (on/off) @ 25°C: | 19ns/60ns |
Gate Charge: | 77nC |
Input Type: | Standard |
Switching Energy: | 410µJ (on), 230µJ (off) |
Series: | GenX3™ |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 250A |
Current - Collector (Ic) (Max): | 75A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IXGP48N60C3 is a state of the art Insulated Gate Bipolar Transistor (IGBT) which belongs to the class of "Single IGBTs". This kind of transistor was developed as an evolution of the popular BJT (Bipolar Junction Transistor), providing higher efficiency, higher switching frequency and better temperature stability. In this article, we will discuss the IXGP48N60C3\'s application fields and its working principle.
Application fields
The IXGP48N60C3 is mainly used to switch high-power DC voltages and AC voltages. It is one of the best IGBT transistors to control the switching of high-power loads. It can for example be used for motor control, server power-management control, power conversion applications, as well as controlling high-power switching devices such as LED drivers, solar inverters, and so on. Additionally, it can be used as a voltage regulator in power supplies. The IXGP48N60C3has a wide range of rated currents, from 2A to 45A. The maximum collector current is 47A.
Working principle
The IXGP48N60C3 is an IGBT transistor, which is basically a combination of a BJT and an MOSFET. It consists of four terminals – drain, gate, emitter and collector. When a voltage is applied to the gate terminal, it "activates" the transistor and switches it on. In other words, when the gate voltage is at a certain level, a channel is formed between the source and drain, allowing current to flow from the source to the drain. In the IXGP48N60C3, the gate voltage needs to be at least 5V for the transistor to be activated. In other words, if a voltage below 5V is applied to the gate terminal, the transistor will not be switched on.
When current flows through the transistor, it is said to be "on", while when there is no current flowing, the transistor is "off". In other words, the IXGP48N60C3\'s state is regulated by the voltage applied to the gate. When it is off, the collector-emitter voltage can be as high as 600V. The IXGP48N60C3 has a high temperature stability which allows it to operate at higher temperatures without compromising its performance.
Conclusion
In conclusion, the IXGP48N60C3 is a highly efficient IGBT transistor which is widely used for controlling high-power loads. It has a wide range of rated currents, from 2A to 45A, and a maximum collector current of 47A. Furthermore, it has a high temperature stability which allows it to operate at higher temperatures without compromising its performance. Finally, its state is regulated by the voltage applied to the gate and when it is off, the collector-emitter voltage can be as high as 600V.
The specific data is subject to PDF, and the above content is for reference
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