Allicdata Part #: | IXGP20N120-ND |
Manufacturer Part#: |
IXGP20N120 |
Price: | $ 3.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 40A 150W TO220 |
More Detail: | IGBT PT 1200V 40A 150W Through Hole TO-220AB |
DataSheet: | IXGP20N120 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
50 +: | $ 3.49763 |
Power - Max: | 150W |
Base Part Number: | IXG*20N120 |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 800V, 20A, 47 Ohm, 15V |
Td (on/off) @ 25°C: | 28ns/400ns |
Gate Charge: | 63nC |
Input Type: | Standard |
Switching Energy: | 6.5mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 80A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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An IXGP20N120 is a low-voltage insulated-gate bipolar transistor (IGBT). It is part of the IXYS\' family of IGBTs, which are advanced power devices that combine the beneficial features of both the MOSFET and the bipolar transistor. The IXGP20N120 has a wide range of application fields, such as motor control and switching applications, high-voltage drives, and high-efficiency power converters. It operates with a low conduction loss, with a low-turn-on voltage and low gate current requirements. The device is suitable for motor control in air conditioners, refrigerators, pumps, cookers and washing machines, as well as for other consumer home appliances. It is also suited for motion control and for renewable energy systems. The main working principle behind the IXGP20N120 is the conduction of current from the collector to the emitter. The bipolar transistor is enhanced with a insulated-gate field-effect structure, which uses a voltage to control the current. When the gate-to-source voltage exceeds a certain threshold, an avalanche breakdown current is generated, which lowers the voltage drop of the device and improves its overall efficiency. The device offers superior switching performance, with very low switching losses at high current levels. The IXGP20N120 also features a combination of the latest MOS technology and rugged IGBT technology, providing superior current, noise and thermal management capabilities. The IXGP20N120 has a standard insulated gate that is capable of driving large power loads. It also features a low-power driver, allowing it to operate at high-switching frequencies with reduced power loss. The device is designed for applications requiring high-speed switching and high reliability, with no compromise on overall cost efficiency. In addition, the IXGP20N120 offers high-level noise and EMI (electromagnetic interference) performance. It is also designed for application in high-voltage systems, withstanding up to 25kV dielectric strength. This improves system reliability and reduces potential EMI emissions. In conclusion, the IXGP20N120 is an advanced IGBT suitable for a wide range of applications, notably motor control and switching applications, high-efficiency power converters, and renewable energy systems. It offers superior current and thermal management capabilities, as well as a low-turn-on voltage and low gate current requirements. With its high-level noise and EMI performance and its high-voltage-withstand capability, the IXGP20N120 ensures improved reliability and system performance.
The specific data is subject to PDF, and the above content is for reference
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IXGP12N60CD1 | IXYS | 0.0 $ | 1000 | IGBT 600V 24A 100W TO220I... |
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