IXGP12N60CD1 Allicdata Electronics
Allicdata Part #:

IXGP12N60CD1-ND

Manufacturer Part#:

IXGP12N60CD1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 24A 100W TO220
More Detail: IGBT 600V 24A 100W Through Hole TO-220AB
DataSheet: IXGP12N60CD1 datasheetIXGP12N60CD1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 90µJ (off)
Base Part Number: IXG*12N60
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 35ns
Test Condition: 480V, 12A, 18 Ohm, 15V
Td (on/off) @ 25°C: 20ns/60ns
Gate Charge: 32nC
Input Type: Standard
Series: HiPerFAST™, Lightspeed™
Power - Max: 100W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Current - Collector Pulsed (Icm): 48A
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGP12N60CD1 is a 600V single IGBT transistor. This series of IGBTs is robustly designed to be efficient in power applications such as PFC, induction cooking, and high power automation systems. It is rated for a current of 12A, but with its high power density, it can easily handle di/dt and dv/dt values of up to 630A/μs and 300V/μs respectively.

IGBTs are similar to MOSFETs in that they are voltage-controlled field effect transistors. Unlike MOSFETs, however, IGBTs have a non-rectifying Schottky diode between the collector and the emitter, allowing them to water-proof the current flow to prevent reverse bias damage. By combining the advantages of MOSFETs and BJT transistors, IGBTs are used in applications where high switching speed, low on-resistance, wide operating area, and high dynamic characteristics are required.

The IXGP12N60CD1 is designed as an inherently low gate drive device, allowing it to be used in applications where gate resistance limiting is not necessary. It is rated for a gate-emitter charge of 2.95nC, which makes it a great choice for applications where switching time has a big impact on the success of the device. In addition to its low gate drive, the IXGP12N60CD1 also features low thermal resistance from junction to case, allowing it to dissipate heat quicker, making it suitable for temperature-sensitive applications.

When it comes to safety, the IXGP12N60CD1 offers the highest surge immunity available in the industry. It is rated for a voltage of 1200V, which helps ensure that this device is not damaged by electrical surges. In addition to its low gate drive and surge immunity, the IXGP12N60CD1 is equipped with a built-in overcurrent protection feature, which helps protect the device from short circuit and overvoltage damage.

The IXGP12N60CD1 can be used in a variety of applications and power conversion tasks - including AC, DC, and PFC converters - thanks to its high voltage and current ratings, high efficiency, and low-loss operation. It can be used for high-power drives, such as those found in industrial machines, pumps, and motors, due to its robust design and high-current rating. In addition, it can be used in battery chargers and charge controllers, as well as in applications involving switching high voltages and currents, like relays and H-bridge circuits.

The IXGP12N60CD1 is a great choice for applications needing a high-power, high-frequency switching device. In addition to its low gate drive and high surge immunity, it operates at a maximum frequency of 1 kHz, providing efficient operation in high-frequency applications. Furthermore, it is equipped with a low-voltage start-up circuit, which allows the device to stay in its off state even in the event of a power surge.

To sum it up, the IXGP12N60CD1 is an ideal choice for applications involving high voltage and current, high-power drives, and high-frequency switching. With its wide operational area, low gate charge, and surge immunity, this series of IGBTs offers excellent performance in a variety of power conversion tasks, making it a widely used device for many industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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