Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The IXGP4N100 is a single transistor IGBT (Insulated Gate Bipolar Transistor) from the IXYS family of high voltage semiconductors. It is designed for medium power switching applications in the Industrial markets. The device has four chips connected in anti-parallel forming a "Half Bridge" circuit. Its basic features include turn-off delays reduced to a fraction of the standard, conduction losses reduced to half, and even distribution of power in the circuit.

Features and Benefits

The main features of this device include a voltage capability of 3.3 kV, current capability of 10A, input capacitance per channel of 330 pF, and a low on-state resistance. It also has a demountable clamp structure incorporated, making it very easy to assemble and disassemble. The device has a high switching frequency without any special gate driver design considerations, and has very low all-affected turn-off delays with a switching frequency of up to 3 MHz.

Application Fields

The IXGP4N100 is an ideal choice for many applications in the Industrial market. It is designed for power management and displays, lighting control, home and building automation, LED lighting, and more. The device has a low on-state resistance, making it suitable for applications that require high switching frequencies and duties. It can also be used for more efficient conversions, as it can reduce conduction losses by up to half.

Working Principle

The IXGP4N100 works in three distinct modes, or stages: turn-on delay, conduction, and turn-off delay. When a voltage is applied to the gate, a positive gate current is created which in turn causes a positive potential difference (gate-emitter) across the IGBT, allowing electron current to flow between the base and emitter. This in turn causes a negative potential difference (collector-emitter) across the transistor, conducting collector current. When the gate current is reduced, the current flow between the base and emitter is stopped, causing the emitter to become negative. This in turn causes a reduction in collector-emitter current and the IGBT turns off. The delay time between the gate voltage rise and the IGBT turning off is called the turn off delay time.

Conclusion

In conclusion, the IXGP4N100 is a single transistor IGBT from the IXYS family of high voltage semiconductors. It is designed for medium power switching applications in the Industrial markets, and has features such as turn-off delays reduced to a fraction of the standard and conduction losses reduced by up to half. Its applications include power management and displays, lighting control, home and building automation, LED lighting, and more. The device works in three distinct modes: turn-on delay, conduction, and turn-off delay.

The specific data is subject to PDF, and the above content is for reference