IXGP12N100AU1

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IXGP12N100AU1 is a single Insulated Gate Bipolar Transistor (IGBT) module, designed and manufactured by Infineon Technologies. It belongs to the series of IGBTs that are designed for power control applications. The IXGP12N100AU1 is a high-power module with a collector current of 100A, also called "collector current capability". With its built-in high-speed, rated voltage of 600V and advanced power control technologies, the IXGP12N100AU1 is an ideal choice for applications that require high-power control in an environment that requires space-saving solutions.

The IXGP12N100AU1 features a built-in active clamping circuit, which not only improves performance, but also reduces the operation and installation time. In addition, the built-in protection features help prevent the operational malfunctions and system breakdowns that are commonly experienced with standard IGBTs. By incorporating over-voltage protection, short circuit protection, and over-temperature protection, the IXGP12N100AU1 can help ensure that the system is running efficiently and correctly.

When using the IXGP12N100AU1, it is important to understand the modes of operation and the working principle of the device. In normal operation, the IXGP12N100AU1 works like a field-effect transistor (FET), driving the IGBT\'s main current through the main power transistor layer. In this mode, the IXGP12N100AU1 sends the gate control signal to the main power transistor, which then controls the collector voltage and current. This method allows for a large operating range and higher power control accuracy.

In addition to normal operation, the IXGP12N100AU1 also has two additional modes, namely the switching and freewheeling mode. In the switching mode, the module functions similar to an FET and applies a connection between the gate and emitter of the power transistor. This mode is mainly used in inductive loads applications such as motor drives or electronic ballast where a fast switching rate needs to be maintained. In the freewheeling mode, the module functions similar to a bipolar junction transistor (BJT) and applies a connection between the collector and emitter of the power transistor. This mode is mainly used for switching applications, where dissipative losses need to be minimized. The IXGP12N100AU1 offers an adjustable PWM frequency range from 15 kHz to 20 kHz.

The IXGP12N100AU1 module is a versatile device, making it suitable for many applications, including motor drives, battery charging systems, switch mode power supplies, dc-dc converters, solar inverters, induction heating, and traction systems. The IXGP12N100AU1 has a narrow gate emitter voltage range, so it can be used for high frequency switching applications where high switching frequency is required. The IXGP12N100AU1 has an industry-leading low conduction and switching losses, making it ideal for use in switching power supplies and renewable energy inverters.

The IXGP12N100AU1 is an ideal choice for applications that require high-power control and fast response times. It is well-suited for medium- and high-power applications due to its high current capabilities and advanced power control technologies. With its built-in over-voltage protection, short circuit protection, and over-temperature protection, the IXGP12N100AU1 provides reliable and efficient performance in a wide range of applications.

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