IXGP16N60B2

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The IXGP16N60B2 is a high-voltage N-channel insulated gate bipolar transistor (IGBT) that can achieve high-speed switching. The device has a wide VCE range of 400V, fast turn-on time of 15ns and a low gate current of 200mA. This makes it an ideal choice for high-power applications such as power conversion, motor drive, high-voltage switching and other power control tasks.

Features

• VCE(sat) of up to 2.3V
• Tvjop maximum of 175°C
• Gate turn-on time of 15ns
• Low gate current requirement of 200mA
• Inhibit pin to turn off device
• High collector emitter voltage of 800V

Application Fields

The IXGP16N60B2 is widely used in applications that require high-voltage, high-frequency switching. This can include:

• Power supplies
• Motion control
• High-voltage relays
• Solar inverters
• Alternative energy solutions
• Motor drives

Working Principle

The working principle of the IXGP16N60B2 is based on the principles of an insulated gate bipolar transistor (IGBT). An IGBT is a combination of a MOSFET and a BJT and it takes advantage of the low on-state voltage of the MOSFET and the fast switching features of the BJT.

To turn the IXGP16N60B2 device on, the gate voltage is increased. This causes an increase in channel current, resulting in a higher current flow through the collector-emitter. This increases the voltage across the collector-emitter, creating a desired voltage drop across the device.

To turn the device off, the gate voltage is reduced. This causes a decrease in channel current, resulting in a lower current flow through the collector-emitter. This reduces the voltage across the collector-emitter, creating a desired voltage drop across the device.

The IXGP16N60B2 is an ideal choice for applications that require high-speed switching and high-voltage resistance. It has a wide VCE range of 400V, a fast turn-on time of 15ns and a low gate current of 200mA. This makes it an ideal choice for high-power switching applications such as power conversion, motor drive and other power control tasks.

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