IXGP24N120C3

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The IXGP24N120C3 is a field-effect transistors (FETs) semiconductor device specifically designed for use in power switching applications. It is part of the IGBTs (Insulated Gate Bipolar Transistors) family of switches, and falls into the single type category. Its capabilities and features make it a perfect candidate for highly efficient power switchers in a broad range of applications.

Power Switcher Basics

Power switchers are semiconductor devices designed to switch forms of energy from one form to another. This typically involves converting high-frequency alternating current (AC) from one voltage level to another. This can include raising the voltage (e.g., from 120 volts to 240 volts) and/or reducing the frequency (e.g., from 60 Hz to 20 Hz).

Power switchers are an integral part of the power supply design in any system, and need to be carefully selected depending on the application. They must be able to handle the power levels required and maintain a high level of efficiency. This is where the IXGP24N120C3 comes in.

IXGP24N120C3 Application Field and Features

The IXGP24N120C3 is designed for use in a variety of power switching applications, from motor speed control to high-end power conversion systems. It offers a wide range of features for efficient operation, such as:

• High blocking voltage (Vce(max)) of 1200 volts.
• Very low on-state resistance (Rds(on)) at 2.4 mohms
• Low capacitance.
• Low gate charge (Qg) of 33.2 nC.

These features make the IXGP24N120C3 a great choice for applications where high blocking voltage, low on-state resistance, and low gate charge are important.

Working Principle of the IXGP24N120C3

The IXGP24N120C3 is an Insulated Gate Bipolar Transistor (IGBT). It is a three-terminal transistor device, with the emitter and collector terminals on the bottom and the gate terminal on the top. The IXGP24N120C3 is a type of MOSFET, which means that its gate terminal is insulated from the collector-emitter terminals. This insulation allows for a fast switching operation and excellent electrical isolation between the two terminals.

In operation, the IXGP24N120C3 turns on (or turns off) when a voltage is applied to the gate terminal. When the voltage is applied to the gate, it attracts electrons from the emitter to the collector, allowing current to flow. When the voltage is removed, the electrons are repelled back to the emitter, and the device is turned off. This fast turning on and off allows for efficient power conversion applications.

Conclusion

The IXGP24N120C3 is a powerful and efficient FET power switching device, perfect for applications where high voltage blocking, very low on-state resistance, and low gate charge are important. It is an IGBT device, meaning it has insulated gate terminals and enables fast switching operations for efficient power conversion. The IXGP24N120C3 has a broad range of applicability, making it a great choice for many power control and switching applications.

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