Allicdata Part #: | IXGP30N60C3C1-ND |
Manufacturer Part#: |
IXGP30N60C3C1 |
Price: | $ 9.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 60A 220W TO220 |
More Detail: | IGBT PT 600V 60A 220W Through Hole TO-220AB |
DataSheet: | IXGP30N60C3C1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
50 +: | $ 8.61539 |
Power - Max: | 220W |
Base Part Number: | IXG*30N60 |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 300V, 20A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 17ns/42ns |
Gate Charge: | 38nC |
Input Type: | Standard |
Switching Energy: | 120µJ (on), 90µJ (off) |
Series: | GenX3™ |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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IXGP30N60C3C1 is an insulated-gate bipolar transistor (IGBT) from IXYS Corporation\'s Core family of IGBTs. It is a single device featuring a large alternating current (AC) rating for a wide range of applications, including motor control and power factor correction.IGBTs are bi-directional semiconductor switches. By controlling the flow of electrical current, they can be used to switch power on and off in various applications. They are similar to MOSFETs and are composed of three components: an insulated gate, a body, and a source/drain. Unlike other types of transistors, IGBTs are typically larger and heavier, but they also permit higher voltage and current ratings.
The IXGP30N60C3C1 is a single IGBT with a high-current rating of 180A (averaged over the life of the device). It is designed for applications that require high-speed switching, such as motor control, UPS (uninterruptible power supply), grid power systems, solar power systems, switching power supplies, and power factor correction systems. It features a robust body with high-temperature super-junction field-stop technology, which allows the device to operate at higher temperature ranges (up to 175°C) and helps protect it from current-induced failures. It is also optimized for low switching and conduction losses, making it suitable for higher-power applications.
The IXGP30N60C3C1 also features an integrated crowbar for short-circuit protection. The device employs two anti-parallel diodes, which are connected in series allowing the device to switch bidirectionally. When current flows through the body, the diodes conduct and latch, preventing the power from backfeeding. This provides short-circuit protection to the device by limiting the dissipation of power.
The IXGP30N60C3C1 is controlled by an insulated gate. When a negative voltage is applied to the gate terminal, it creates an electric field that alters the shape of the silicon, allowing current to flow. The device is then “on,” and current flows through the source terminal.When the gate voltage is removed, the electric field dissipates, and the device turns “off.” This turns off the current flow and blocks any further current flow until a gate voltage is applied again.
In summary, the IXGP30N60C3C1 is a single IGBT designed to handle high-current ratings (up to 180A) and high operating temperatures (up to 175°C). Its integrated crowbar short-circuit protection and reliable field-stop technology make it suitable for applications that require high-speed switching such as motor control, UPS systems, power factor correction, and more. Its simple operation is controlled by an insulated gate that delivers on-and-off current switching.
The specific data is subject to PDF, and the above content is for reference
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