IXGP20N100

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IXGP20N100 is a type of insulated gate bipolar transistor (IGBT) that is used as an electronic switch in power electronics applications. IGBTs are hybrids of MOSFETs and bipolar transistors, and combine the advantages of both technologies. They offer high power density, high frequency performance, high operating temperatures, and superior temperature cycling. IXGP20N100 IGBTs are suitable for power, drive and power conversion applications.

An IGBT is composed of a gate, an emitter, a collector and an isolator. The gate controls the device. By applying a positive or negative voltage to the gate, the device is turned on or off. The emitter and collector are connected to the external power source, which is either AC or DC, or to a load or other device. The isolator is an intrinsic part of an IGBT that reduces the capacitance between the gate and the emitter, allowing for higher speed switching and fast rise and fall times. 

The IXGP20N100 has a high blocking voltage rating of 1200V, with a peak current rating of 20A. It has a low on-state voltage drop, a neglibile reverse recovery time, and a low turn-off delay time. This makes it suitable for a variety of applications, including motor inverters, AC/DC converters and solar PV converters. It can also be used in power supplies, UPSs and surge arrestors, uninterruptible power supplies, electric vehicles and other applications.

In motor inverters, the IXGP20N100 IGBT is used to convert AC power from the line to DC power to drive the motor. Its high current rating makes it suitable for controlling higher power loads. It can also be used in AC/DC converters where it can help to improve the efficiency of electric power conversion. It also enables efficient conversion of DC power for solar PV applications.

The working principle of the IXGP20N100 IGBT is based on its structure. As voltage is applied to the gate, it causes current to flow from the emitter to the collector. This in turn allows the current to flow from the collector to the emitter. The current then passes through the device and runs back to the gate. When no voltage is applied to the gate, the current stops flowing and the device is in the off-state. The higher the gate voltage, the more current can flow through the device.

The IXGP20N100 IGBT is a high current rating device that is used in a variety of power electronics applications. It combines the advantages of both MOSFETs and bipolar transistors, offering high power density, high frequency performance, high operating temperatures, and superior temperature cycling. It is suitable for a range of applications, including motor inverters, AC/DC converters and solar PV converters. Its working principle is based on its structure, and voltage applied to the gate causes current to flow between the emitter and collector.

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