IXGP30N120B3

Series:	GenX3™
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	60A
Current - Collector Pulsed (Icm):	150A
Vce(on) (Max) @ Vge, Ic:	3.5V @ 15V, 30A
Power - Max:	300W
Switching Energy:	3.47mJ (on), 2.16mJ (off)
Input Type:	Standard
Gate Charge:	87nC
Td (on/off) @ 25°C:	16ns/127ns
Test Condition:	960V, 30A, 5 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Base Part Number:	IXG*30N120

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXGP30N120B3 Application Field and Working Principle

Introduction

The IXGP30N120B3 is a single IGBT module made by IXYS Corporation. It is a robust and reliable power transistor which finds its applications in various switching and amplifier circuits. The device is specifically tailored to provide high breakdown voltage and very low on-state drop so that designers can optimize the power dissipation of their circuits. It also offers a very low gate capacitance that maximizes its switching speed.

Application Field

The IXGP30N120B3 device is mainly used in power amplification and switched-mode power supply circuits. Its rugged construction and low on-state resistance make it an ideal choice for power devices operated in undemanding environments such as HVAC systems, washing machines and other home appliances. It can also be used in a variety of high-speed switching applications. In addition, the device provides enhanced EMI/RFI immunity, which makes it suitable for digital and communication systems.

Working Principle

The working principle of the IXGP30N120B3 is based on the same principle as a bipolar junction transistor. In brief, it has three major elements: the emitter, the base, and the collector. This device uses a large emitter and collector area to achieve very high current gains and excellent temperature stability. In addition, the device has a built-in diode, which provides fast turn-off for reverse current protection.When a voltage is applied to the gate of the IXGP30N120B3, the gate-emitter junction becomes forward-biased and allows current to flow from the emitter to the base. This process increases the current with respect to the base and allows for current gain. This current gain results in a large gain in current from the collector to the emitter and allows for power amplification.

Conclusion

The IXGP30N120B3 is an ideal choice for power applications such as amplified switching, HVAC systems, and digital or communication systems. Its low on-state drop and high breakdown voltage allow designers to optimize their power dissipation in a variety of circuit designs. Furthermore, its fast turn-off diode allows for reverse current protection. As such, it is no surprise that the IXGP30N120B3 is an integral part of numerous modern circuit designs.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description