Allicdata Part #: | IXGP2N100A-ND |
Manufacturer Part#: |
IXGP2N100A |
Price: | $ 1.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1000V 4A 25W TO220AB |
More Detail: | IGBT 1000V 4A 25W Through Hole TO-220AB |
DataSheet: | IXGP2N100A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
50 +: | $ 1.77118 |
Power - Max: | 25W |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 800V, 2A, 150 Ohm, 15V |
Td (on/off) @ 25°C: | 15ns/300ns |
Gate Charge: | 7.8nC |
Input Type: | Standard |
Switching Energy: | 260µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 3.5V @ 15V, 2A |
Current - Collector Pulsed (Icm): | 8A |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 1000V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IXGP2N100A is a single IGBT transistor commonly used in power electronic applications. This IGBT offers superior performance, high speed switching and low on-state resistance.
The IXGP2N100A has some of the best characteristics for an IGBT transistor. It has an ultra-high breakdown voltage of up to 1200 V, making it an ideal choice for a wide range of power applications. It also has a very low on-state resistance of 500 mΩ, allowing for faster switching and reduced heat losses.
The IXGP2N100A is a highly efficient device and is most often used in power supplies, motor drives, and inverters. In power supplies, it can be used to create an efficient low power switching solution. In motor drives, the IXGP2N100A can be used to deliver high speed switching and reduce the need for large DC-link capacitors. In inverters, the IXGP2N100A provides for a highly efficient conversion of AC/DC and DC/AC electricity.
The IXGP2N100A features integrated protection functions to ensure high reliability. This includes over-current protection, over-voltage protection, and under-voltage protection. These protection functions serve to minimize the wear and damage of the IGBT during normal operation.
The IXGP2N100A working principle is based on three classical states: the off-state, the on-state, and the reverse-state. In the off-state, the transistor is open and no current passes through it. When current is applied to the IGBT, it enters the on-state, allowing a controlled amount of current through. Finally, in the reverse-state, the IGBT acts like a switch and conducts current in the opposite direction.
As with any other semiconductor device, it is important to follow some basic precautions when working with the IXGP2N100A. It is important to never apply a voltage higher than the maximum voltage rating of the device and to avoid high surge currents. A properly designed circuit can minimize the effects of these problems.
In conclusion, the IXGP2N100A is an excellent choice for power electronic applications due to its superior performance and integrated protection functions. Its efficient operation and low on-state resistance make it a perfect choice for a variety of applications. Its working principle is based on three classical states, which allows for a wide range of applications. Finally, it is important to follow some basic precautions when working with the IXGP2N100A to ensure a long and safe operation.
The specific data is subject to PDF, and the above content is for reference
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