Allicdata Part #: | IXGP30N60B2-ND |
Manufacturer Part#: |
IXGP30N60B2 |
Price: | $ 1.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 70A 190W TO220 |
More Detail: | IGBT 600V 70A 190W Through Hole TO-220AB |
DataSheet: | IXGP30N60B2 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
50 +: | $ 1.77118 |
Power - Max: | 190W |
Base Part Number: | IXG*30N60 |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 400V, 24A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 13ns/110ns |
Gate Charge: | 66nC |
Input Type: | Standard |
Switching Energy: | 320µJ (off) |
Series: | HiPerFAST™ |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 24A |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 70A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IXGP30N60B2 is a type of Insulated Gate Bipolar Transistor (IGBT) which features a Single package. It is often used in a wide range of applications, ranging from low-end industrial drives to variable frequency drives and renewable energy installations.
Insulated Gate Bipolar Transistors (IGBTs) are a type of semiconductor transistor used for switching or amplifying electronic signals. They are often considered a hybrid of bipolar transistor and Field Effect Transistors (FETs) but function differently to both. They are a preferred choice for many applications due to their ease of integration and the capability to perform specific switching or amplifying functions.
The IXGP30N60B2 is a 600V, 30A IGBT which is designed to provide high speed and low losses in a variety of applications. It is rated for operation between 0°C and 150°C and has high junction temperatures for reliable operation and long term stability. The IXGP30N60B2 is also very efficient and has low switching losses which can result in lower energy consumption and improved system performance. This makes it a great choice for applications such as variable frequency drives (VFDs), renewable energy generation, LED lighting, welding and motor control.
The working principle of the IXGP30N60B2 is essentially based on the same principles as a bipolar transistor. It has two P-Channel Field Effect Transistors (FETs) and two N-channel FETs, which are connected in an “H” Bridge configuration. When the gate signal is applied, the FETs are turned on and current flows between the drain and the source. The current flow is proportional to the gate voltage, making the IXGP30N60B2 an ideal choice for applications which require precise control of current flow or power.
The IXGP30N60B2 is a very versatile device as it is suitable for a variety of applications. It can be used in high power AC or DC drives and renewable energy installations. It can also be used in a range of switching and amplifying applications, such as LED lighting, welding and motor control. This makes it an optimal choice for integrating with other systems and applications. The IXGP30N60B2 is suitable for both low and high power applications and its high current ratings make it an ideal device for applications where high power losses are expected.
The IXGP30N60B2 is an excellent choice for a wide range of applications due to its wide range of features and broad range of applications. It offers high performance, efficiency and reliability, as well as low switching losses and a wide temperature range. This makes it a great choice for applications where precise control of current flow or power is required. The IXGP30N60B2 is an ideal choice for a range of applications and its versatility and performance make it an excellent choice for low-end and high-power applications.
The specific data is subject to PDF, and the above content is for reference
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