IXGT15N120CD1 Allicdata Electronics
Allicdata Part #:

IXGT15N120CD1-ND

Manufacturer Part#:

IXGT15N120CD1

Price: $ 5.45
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 30A 150W TO268
More Detail: IGBT 1200V 30A 150W Surface Mount TO-268
DataSheet: IXGT15N120CD1 datasheetIXGT15N120CD1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 4.94970
Stock 1000Can Ship Immediately
$ 5.45
Specifications
Switching Energy: 1.05mJ (off)
Base Part Number: IXG*15N120
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 40ns
Test Condition: 960V, 15A, 10 Ohm, 15V
Td (on/off) @ 25°C: 25ns/150ns
Gate Charge: 69nC
Input Type: Standard
Series: --
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGT15N120CD1 is a high-performance IGBT transistor, belonging to the single IGBT family. It is used in a variety of applications including motor control, power management in industrial automation, automotive applications, home appliance control, and solar inverters.

An IGBT, or insulated gate bipolar transistor, is a type of transistor that combines the benefits of both a BJT (bipolar junction transistor) and MOSFET (metal-oxide-semiconductor field-effect transistor). It has both high input impedance and fast switching speeds, making it ideal for applications requiring high power densities, such as motor control. The IXGT15N120CD1 has a maximum junction temperature of 175°C and a IGBT drain current (Id) rating of 15 A.

In a typical IGBT transistor, the internal structure consists of two dielectric layers (p-type and n-type) kept apart by a thin oxide layer. When a voltage is applied to the gate of the transistor, it creates an electrostatic field which attracts electrons from the p-type layer to the n-type layer. This process is called inversion, and it enables the transistor to switch from conducting to non-conducting state. This switching capability makes the device ideal for applications requiring high speed and power, such as motor control.

The main benefits of IXGT15N120CD1 include high speed, low power consumption, low thermal resistance and high current density. In addition, its design has been optimized to minimize switching losses while providing maximum efficiency. Furthermore, it is designed to be robust and reliable, with its reinforced insulation layers, as well as a wide operating temperature range.

The IXGT15N120CD1 is a versatile device, and can be used in a range of applications, from motor control to solar inverters. In motor control applications, it can be used to enable fast switching between various speeds and directions, thereby allowing for highly efficient operation. In solar inverters, it can be used to switch between different currents and voltages, thereby increasing the efficiency of the system. In addition, it can also be used in other applications such as home appliance control, automotive applications, and industrial automation.

The IXGT15N120CD1 is an advanced IGBT transistor that offers high speed and power, as well as low power consumption, low thermal resistance and high current density. Its reinforced insulation layer and wide operating temperature range make it suitable for a variety of applications, from motor control to solar inverters.

The specific data is subject to PDF, and the above content is for reference

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