IXGT72N60A3 Allicdata Electronics
Allicdata Part #:

IXGT72N60A3-ND

Manufacturer Part#:

IXGT72N60A3

Price: $ 5.61
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 540W TO268
More Detail: IGBT PT 600V 75A 540W Surface Mount TO-268
DataSheet: IXGT72N60A3 datasheetIXGT72N60A3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 5.09880
Stock 1000Can Ship Immediately
$ 5.61
Specifications
Power - Max: 540W
Base Part Number: IXG*72N60
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 50A, 3 Ohm, 15V
Td (on/off) @ 25°C: 31ns/320ns
Gate Charge: 230nC
Input Type: Standard
Switching Energy: 1.38mJ (on), 3.5mJ (off)
Series: GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Current - Collector Pulsed (Icm): 400A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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An IXGT72N60A3 is a three-terminal insulated gate bipolar transistor (IGBT) that is used for switching applications. It is designed to have high efficiency, low conduction loss, and high-frequency operation. This type of transistor is a dual-die device composed of two individual cells within a single package.

The IXGT72N60A3 features include high blocking voltage, low ON resistance, high surge capability, and low switching losses. This type of transistor is suitable for applications such as motor control, light dimming, current regeneration, and power factor correction. It is commonly used in motor drives, welding, and solar inverters.

The working principle of an IXGT72N60A3 can be broken down into two primary components: the insulated gate and the bipolar junction transistor (BJT). The insulated gate is responsible for controlling the current flow through the transistor using a gate voltage, while the BJT is used to amplify the current.

The insulated gate acts like a switch, opening and closing the current path as the gate voltage changes. When the gate voltage is low, the device is in its off-state, and no current can pass through. When the gate voltage is increased, the gate-to-source voltage will exceed the transistor\'s threshold value, and the gate will allow current to pass through, switching the device into its on-state.

The BJT part of the IXGT72N60A3 serves to amplify the current that is passing through the device. As the current passes through one part of the BJT, it will be amplified as it passes through another, allowing for higher currents to flow. This makes the IXGT72N60A3 an excellent choice for applications which require higher current switching.

The IXGT72N60A3 is a versatile device that is ideal for a variety of applications. Its high voltage, low on-resistance, and low switching losses make it an excellent choice for motor control, current regeneration, and power factor correction. Its high switching speeds also make it ideal for applications such as welding, light dimming, and solar inverters.

The specific data is subject to PDF, and the above content is for reference

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