Power - Max:	110W
Base Part Number:	IXG*10N170
Supplier Device Package:	TO-268
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	--
Td (on/off) @ 25°C:	--
Gate Charge:	32nC
Input Type:	Standard
Switching Energy:	--
Series:	--
Vce(on) (Max) @ Vge, Ic:	4V @ 15V, 10A
Current - Collector Pulsed (Icm):	70A
Current - Collector (Ic) (Max):	20A
Voltage - Collector Emitter Breakdown (Max):	1700V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IXGT10N170 Application Field and Working Principle

Introduction

Insulated Gate Bipolar Transistors (IGBTs) serve as a semiconductor device in analog or digital circuits. Compared to the standard Bipolar Transistors (BJTs), IGBTs are unipolar devices and combine both field-effect and bipolar capabilities. IXGT10N170 is the type name of an IGBT produced by IXYS Corporation. This device is a highly efficient gate controlled bipolar transistor was designed specifically to be used in choke applications. This paper introduces the application field and working principle of IXGT10N170.

Application Field

IXGT10N170 is a 200 Volt IGBT optimized for power factor correction (PFC) diodeless solutions. It is suitable for use in both low or high frequency resonant converters as well as other, more challenging industrial and consumer applications. IXGT10N170 is also designed for use in a wide variety of automotive and industrial motor drives. IXGT10N170 is particularly useful in motor drives because it exhibits excellent output characteristics and is capable of withstanding higher operating temperatures without deterioration.

Design and Features

The IXGT10N170 is a single IGBT of a two-drain two-source structure. It has a maximum blocking voltage of 200 V, DC current rating at 25 °C of 10 A, a threshold voltage of 12 V, a minimum on-state voltage of 1.5 V and a maximum junction temperature of 150 °C. The IXGT10N170 is available in a TO-220AB-3L package with a lead-free finish and RoHS compliance.

Working Principle

IGBTs work by integrating the one voltage-control characteristic of a field-effect transistor (FET) structure with the high in-rush current capability of a bipolar transistor in a single monolithic device. When the control gate voltage is zero, the current flow between the two drains is controlled by the built-in PN-junction of the bipolar transistor. When a positive gate voltage is applied, a channel is induced in the P-type layer beneath the gate and the bipolar transistor is turned off, thus blocking current flow through the device. This allows the device to be used as an electronic switch to turn off or on the electrical current.

Benefits and Advantages

The gains achieved by using an IGBT over traditional BJT devices are several fold. For example, the voltage controlled IGBTs possess fast switching speed, allowing them to be used in higher frequency applications. The sturdy construction of the device also allows them to be used in higher temperature environments. Furthermore, the IXGT10N170\'s excellent output characteristics make it well suited for power factor correction (PFC) applications.

Conclusion

The IXGT10N170 IGBT is a highly efficient gate controlled bipolar transistor which is ideal for use in numerous industrial and consumer applications. Features such as its steady output characteristic, fast switching speed and high temperature resistance make the IXGT10N 170 suitable for power factor correction (PFC) diodeless solutions, motor drives, and other high-frequency applications.