IXGT16N170AH1

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IGBTs (Insulated Gate Bipolar Transistors) are a type of semiconductor device that combines the functions of both bipolar transistors and MOSFETs (Metal oxide-semiconductor field-effect transistors). The IXGT16N170AH1 is a high voltage, high speed IGBT module manufactured by IXYS Semiconductor. The device is specifically designed for motor drive applications, such as motor-control systems for traction, air-conditioning, pump and home appliances. This article provides an overview of the IXGT16N170AH1 and its applications, as well as its working principle.

IXGT16N170AH1 Description

The IXGT16N170AH1 is an N-channel IGBT with a blocking voltage of 1700 V. It is a surface mountable, single-stage, low-inductance IGBT module, intended for high power applications. The device utilizes an optimized field plate and clip arrangement to reduce conduction losses and ensure fast switching performance. It also employs a 3rd generation MOSFET design, resulting in improved efficiency and reliability. The IXGT16N170AH1 is capable of switching currents up to 160 A with a low saturation voltage of 2.5 V.

The IXGT16N170AH1 is a surface mount device with a compact footprint, making it suitable for applications with space constraints. The device features a 5-pin J3 package, with an insulation standoff of 11mm. It also features dv/dt immunity of up to 800V/µs and a temperature range of -40 to +125°C.

The IXGT16N170AH1 has been specifically designed for motor drive applications, including motor-control systems for traction, air-conditioning, pump and home applications. The IGBT module provides fast switching speeds and low conduction losses, making it ideal for systems with high power requirements.

IXGT16N170AH1 Working Principle

As an IGBT, the IXGT16N170AH1 utilizes a combination of MOSFET and Bipolar Junctions Transistors (BJT) structures. The device has two gates - an insulated gate and a control gate, which are both insulated from the base. The insulated gate receives a voltage that turns on the IGBT by allowing current to flow between the emitter and collector. The control gate then pulls current away from the emitter, causing the IGBT to turn off.

The IXGT16N170AH1 also features a 3rd generation MOSFET design with a built-in snubber circuit. This snubber circuit helps to reduce dv/dt noise, allowing the device to operate efficiently and reliably. The optimized field plate and clip arrangement further helps to reduce conduction losses and ensure fast switching speeds.

Conclusion

The IXGT16N170AH1 is a high voltage, high-speed IGBT module manufactured by IXYS Semiconductor. It is a compact, low-inductance device with a blocking voltage of 1700 V and fast switching speeds. The optimized field plate and clip arrangement helps to reduce conduction losses, making it ideal for motor drive applications. The device utilizes an insulated gate and a control gate, both insulated from the base, and a 3rd generation MOSFET design with a built-in snubber circuit.

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