IXGT28N120B

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IXGT28N120B Application Field and Working Principle
The IXGT28N120B is a field-stop IGBT (Insulated Gate Bipolar Transistor) developed by IXYS Corp as part of their Inorganic IGBT family. This device provides superior performance in critical applications such as power electronics, motor control, and renewable energy systems.

IGBTs are a type of power semiconductor device that features the combined characteristics of both bipolar junction transistors (BJTs) and MOSFETs (metal-oxide-semiconductor FETs). It is essentially a combined BJT-MOSFET sandwich with a shared gate between the two devices, which helps to realize the desired power output.

The IXGT28N120B features an operating temperature range of -55 to 150 °C and a maximum voltage rating of 1200V. The device is capable of carrying up to 28A of continuous current with a minimum current rating of 12A, and it has a low on-state resistance of 13 mΩ at 25°C. The nominal forward voltage drop is 2.7V at 25°C, and the re-trigger threshold voltage is 3.5V. The IXGT28N120B has a maximum repetitive avalanche energy rating of 40mJ and a maximum dV/dt of 250V/µs.

As with all IGBTs, the IXGT28N120B works by having three main terminals: the emitter, the collector, and the gate (the shared control). When the gate voltage is positive, electrons are attracted away from the base of the PNP transistor, allowing for current to flow through the device. This is known as the “on-state”, and is the primary operational state of the device.

When the gate voltage is negative, electrons are attracted back to the base of the PNP transistor and the device is no longer conducting current. This is known as the “off-state” and is the primary non-operational state of the device. By controlling the voltage on the gate, the device can be switched between the on and off states, thus controlling the flow of current.

The IXGT28N120B is a versatile device suitable for a variety of applications. It is an ideal choice for motor control, such as AC induction motors and brushless DC motors, as well as renewable energy systems, such as in photovoltaic inverters and wind turbines. The device also has excellent reliability and can handle high levels of electrical stress. This makes it a great choice for power electronics applications.

In summary, the IXGT28N120B is a field-stop IGBT manufactured by IXYS Corp for a wide range of electrical applications, especially those in power electronics, motor control, and renewable energy systems. The device’s low on-state resistance, high current handling capability, and excellent reliability make it an attractive choice for many different applications. By controlling the gate voltage, the device can be switched between its on and off states, thus controlling the flow of current.

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