IXGT6N170

Power - Max:	75W
Base Part Number:	IXG*6N170
Supplier Device Package:	TO-268
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	1360V, 6A, 33 Ohm, 15V
Td (on/off) @ 25°C:	40ns/250ns
Gate Charge:	20nC
Input Type:	Standard
Switching Energy:	1.5mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	4V @ 15V, 6A
Current - Collector Pulsed (Icm):	24A
Current - Collector (Ic) (Max):	12A
Voltage - Collector Emitter Breakdown (Max):	1700V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

IXGT6N170 is a full-controlled insulated gate bipolar transistor (IGBT) packaged in the high power module series, IPL-X2. It is a single device, using the industry standard power semiconductor technology. IXGT6N170 has superior operational performance, allowing it to be used in a wide range of applications, such as power supply, motor drive, and solar power systems.

Applications

Power Supplies IXGT6N170 is a perfect solution for many power supply applications, such as Uninterruptible Power Supplies (UPS), Switch Mode Power Supplies (SMPS), High Voltage Power Supplies, and so on. It offers high efficiency and fast response, making it an ideal choice for reliable operation in these applications. Motor Drives IXGT6N170 is ideal for a wide range of motor drive applications, such as AC servo drives, DC motor drive, brushless DC motor drive, and so on. It offers high speed switching and high efficiency, making it an ideal choice for reliable operation in these applications. Solar Power Systems IXGT6N170 can be used in a wide range of solar power systems, such as solar cell arrays, solar charge controllers, solar PV inverters, and so on. It provides excellent performance, high efficiency, and low costs, making it a perfect solution for these applications.

Working Principle

IXGT6N170 is a full-controlled IGBT that functions like a field-effect transistor (FET). In an IGBT, the gate voltage controls the current flow between source and drain terminals. When the gate voltage is high, the current flows through the device. When the gate voltage is low, leakage current flows, but no current flows through the device. This allows for precise control of the current through the device. An IXGT6N170 has three terminals, which are labeled as the Gate, the Collector, and the Emitter. The Gate terminal is used for controlling the current flow between Collector and Emitter terminals. The Collector and Emitter terminals can be connected to the positive and negative terminals of the power source. When the gate voltage is high, electrons are attracted to the Gate terminal, creating a channel in the device between Collector and Emitter terminals. A current is then allowed to flow through the device. When the gate voltage is low, the electrons are repelled and the channel is cut off, so no current is allowed to flow through the device. The IXGT6N170 can be used in either an AC or DC mode. In an AC mode, the gate voltage is switched between high and low states in order to control the current flow. In a DC mode, the gate voltage is kept at a constant level in order to set the current flow.

Conclusion

IXGT6N170 is a high power MOSFET device with superior operational performance. It is ideal for use in a wide range of applications, including power supplies, motor drives, and solar power systems. Its working principle is based on the use of gate voltage to create a channel between the Collector and Emitter terminals, which allows current to flow through the device. IXGT6N170 can be used in either AC or DC modes, depending on the required voltage level and frequency.

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