Allicdata Part #: | IXGT4N250C-ND |
Manufacturer Part#: |
IXGT4N250C |
Price: | $ 16.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 2500V 13A 150W TO268 |
More Detail: | IGBT NPT 2500V 13A 150W Surface Mount TO-268 |
DataSheet: | IXGT4N250C Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
30 +: | $ 14.95660 |
Power - Max: | 150W |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 1250V, 4A, 20 Ohm, 15V |
Td (on/off) @ 25°C: | -/350ns |
Gate Charge: | 57nC |
Input Type: | Standard |
Switching Energy: | 360µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 6V @ 15V, 4A |
Current - Collector Pulsed (Icm): | 46A |
Current - Collector (Ic) (Max): | 13A |
Voltage - Collector Emitter Breakdown (Max): | 2500V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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Power transistors are a type of electronic component used to amplify or switch electrical signals. IGBTs (Insulated Gate Bipolar Transistors) are a relatively new technology that combines the advantages of both MOSFETs and bipolar junction transistors (BJTs). They are similar to MOSFETs in that they have a gate-controlled depletion region, which makes them ideal for applications requiring speed and power efficiency. The IXGT4N250C is an example of a single IGBT.
The IXGT4N250C is a power transistor specifically designed for the medium-level power of medium voltage applications, such as industrial and renewable energy systems. It is housed in a DPAK style package and is RoHS compliant. It has a maximum collector-emitter breakdown voltage of 200V and a withstand voltage of 2.5kV. It has a maximum current rating of 4A and a maximum power dissipation of 3.4W.
The IXGT4N250C is well-suited for various high-current, high-voltage applications due to its low on-resistance and fast switching speed. Common applications include motor control, AC motor drives, servo and actuator control, high-power adapter and charger control, and uninterruptible power supplies.
The basic operation of the IXGT4N250C is similar to that of other IGBTs. It has two main terminals, the collector and the emitter, and the third terminal is used to control the output. When a positive voltage is applied to the gate of the IGBT, it creates a conduction channel between the collector and the emitter, allowing current to flow. When the voltage is removed, the channel closes and the current flow is interrupted. This is known as the “on” and “off” state.
The IXGT4N250C offers several advantages over other IGBTs. It is designed with a built-in diode to protect against reverse current, so power is only consumed when the IGBT is “on.” This reduces power loss and improves efficiency. Additionally, the IXGT4N250C has a low gate voltage, which allows for faster switching speeds and better noise isolation.
Overall, the IXGT4N250C is an ideal choice for high current, medium voltage applications. Its low on-resistance, fast switching speed, built-in diode protection, and low gate voltage make it an efficient and reliable device. As such, it is well-suited for a variety of applications, including motor control, AC motor drives, servo and actuator control, and high-power adapters and chargers.
The specific data is subject to PDF, and the above content is for reference
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