IXGT35N120B Discrete Semiconductor Products

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The IXGT35N120B is a transistor based upon the IGBT (insulated-gate bipolar transistor) technology. It is a single IGBT, meaning it does not require two transistors to function properly, as in the case of a double-IGBT. The IXGT35N120B is primarily used in applications requiring practical power control, such as HVAC, industrial motor control and automotive applications.

An IGBT is a fast-switching power transistor, an advanced form of the MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor). It is commonly used as a switch or amplifier in power electronics applications. It is designed to handle higher voltages and currents than the MOSFET, but is more power efficient than a standard BJT (bipolar junction transistor). The IXGT35N120B can handle a voltage of up to 1200V and a current of up to 35A. This makes it ideal for applications requiring fast switching, such as motor control, HVAC, and automotive systems.

One of the main benefits of the single IGBT technology employed in the IXGT35N120B is its low turning-on losses, minimizing power consumption when the device is turned on. This is due to its integrated body-diode, which eliminates the need for an external diode, allowing power to flow directly from input to output without wasting energy. Additionally, the single IGBT technology provides greater gate control compared to double-IGBTs, and can switch very quickly and with low voltage drop.

The IXGT35N120B also features built-in protection features, such as the temperature dependent current limiting, which limits the current of the device when it is exposed to high temperatures. This helps to protect the device against damage and prevents power loss.

The IXGT35N120B also features built-in logic level shifting, a feature which allows the device to be used with different logic levels. This allows it to be used in applications that require different logic levels, such as those that use TTL logic or CMOS logic. This helps to improve compatibility between the device and other components in the system, allowing for more efficient power control.

The IXGT35N120B’s working principle involves a gate signal that is sent through an insulated gate terminal, which actuates the IGBT. The signal is then sent to the source terminal, which switches the current through the device. The source terminal is connected to the drain terminal, which is connected to the load, allowing current to flow from the source to the load. The current then starts to flow through the device, causing power to be switched from the source to the load.

In summary, the IXGT35N120B is an advanced power control device based upon single IGBT technology. It can handle voltages up to 1200V and currents up to 35A, making it suitable for a wide range of applications. Additionally, it features built-in protection features, logic level shifting, and low turning-on losses, making it an efficient and reliable power control device. Its working principle involves a gate signal being sent to the source terminal, causing current to flow through the device and power to be switched from the source to the load. This makes it a valuable tool in various power-control applications.

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