IXGT30N60B

Switching Energy:	1.3mJ (off)
Base Part Number:	IXG*30N60
Supplier Device Package:	TO-268
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 30A, 4.7 Ohm, 15V
Td (on/off) @ 25°C:	25ns/130ns
Gate Charge:	125nC
Input Type:	Standard
Series:	HiPerFAST™
Power - Max:	200W
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 30A
Current - Collector Pulsed (Icm):	120A
Current - Collector (Ic) (Max):	60A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tube

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IXGT30N60B Application Field and Working Principle

Introduction

Insulated Gate Bipolar Transistor (IGBT) is a power electronic device developed in 1980s. It combines advantages of both MOSFET and BJT, thus providing several advantages over them. IXGT30N60B is a type of IGBT created by IXYS Corporation. It is one of the latest IGBTs, developed for high voltage applications. This article discusses the application area and working principle of IXGT30N60B.

Application Field

XIGT30N60B is a highly reliable IGBT used for high voltage applications. This IGBT has a wide voltage range of 600V to 1700V, which means it can be used as a switching device in many high voltage applications.IXGT30N60B is capable of carrying currents up to 30A, which enables its usage in various high voltage applications such as motor drives, motor control systems, robotic systems, power electronics, Uninterruptible Power Supply (UPS), and wind turbines.IXGT30N60B is also used in other applications such as rectifiers, AC/DC and DC/DC converters, microcontrollers, inverters, electric vehicle charging, and rectifiers.

Working Principle

IXGT30N60B is a three terminal device with a Gate, Emitter, and Collector. It works on the principle of controlling the current by controlling the voltage applied to the Gate terminal.When no voltage is applied to the Gate terminal, the current between the Collector and Emitter terminals is zero. However, when a voltage is applied to the Gate terminal, the current starts flowing between the Collector and Emitter terminals. This is because when the voltage reaches a certain threshold, the electrons build up at the Gate terminal. This results in the formation of an inversion layer between the Gate and Emitter, acting as a conducting path between them. This allows the current to flow from the Collector to the Emitter terminals.The current flow between the Collector and Emitter terminals increases with the increase in voltage at the Gate terminal. Once the voltage reaches a certain point, the current flow saturates. This saturation point is known as the threshold voltage and it varies with the type of IXGT30N60B being used.

Conclusion

IXGT30N60B is an IGBT developed by IXYS Corporation. This IGBT enables the usage of high voltage applications and is capable of carrying up to 30A of current. IXGT30N60B has a wide range of applications in motor drives, motor control systems, robotic systems, power electronics, converters, and inverters. It works on the principle of controlling the current by controlling the voltage applied to the Gate terminal.

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