IXGT72N60B3

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IGBTs have become a commonplace in electronics due to their strong thyristor performance and low power loss. At the same time, the IXGT72N60B3 IGBT module is also suitable for this application field. This article will discuss the application field and working principle of IXGT72N60B3 IGBT module.

The IXGT72N60B3 IGBT module is a Field Stop Insulated Gate Bipolar Transistor (ISGT). It is mainly used for switching applications such as AC and DC power distribution, motor control, and power electronics. This IGBT module has low losses and is suitable for high gate charging/discharging rates. It is also designed to reduce forward recovery loss and prevent reverse recovery, making it an ideal choice for motor control applications.

The IXGT72N60B3 has an operating frequency of 200 kHz, with a low collector-emitter saturation voltage of 1.1V. Its total gate charge is 34.7nC, which reduces power losses when switching. This IGBT module also has a maximum collector-emitter voltage of 600V and a maximum collector current of 72A. Aside from these electrical characteristics, it also has a turn-on and turn-off delay time of 24ns and a maximum junction temperature of 150 °C.

To understand the working principle of IXGT72N60B3, let’s first discuss IGBTs in general. IGBTs are a combination of bipolar transistors and field effect transistors that work together to control current flow. It has three terminals, namely the collector, emitter, and gate. When a voltage is applied to the gate, it creates an electric field that controls current between the collector and emitter. In this mode, the IGBT acts like a normal bipolar transistor. When the gate voltage is increased, the electric field acts to reduce collector current and the IGBT acts like a MOSFET.

Now, let’s look at specific principle of the IXGT72N60B3 IGBT module. This module uses a N-channel structure, with the collector connected to the n-substrate. When a voltage is applied to the gate, it creates an electric field which forces electrons to flow from the n-substrate to the collector. This forms a conductive channel between the collector and emitter. This allows current to flow between the collector and emitter, up to the module’s maximum current rating.

The IXGT72N60B3 can also be turned off by reducing the gate voltage. Once the voltage is taken away, the electric field is reduced and the electrons in the N-substrate drift back to their original position, breaking the conductive channel. This stops current from flowing and effectively turns the module off.

In conclusion, the IXGT72N60B3 IGBT module is suitable for applications where high speed and high power ratings are needed. Its low losses and fast switching speeds make it suitable for motor control and power electronics applications. The working principle of IXGT72N60B3 is based on the formation of an electric field to control current between the collector and emitter. With this information, designers can confidently incorporate the IXGT72N60B3 into their projects.

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