IXGT24N60B

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• Introduction:

  The IXGT24N60B is a single-channel insulated-gate bipolar transistor (IGBT) optimized for use in high-power applications. It is a three-terminal device composed of two vertical bipolar transistors connected in a cascode arrangement and one insulated gate. This design allows for a wide range of applications and allows the device to operate with higher voltage and power levels.

• Application Field:

  The IXGT24N60B has a wide range of applications and is suitable for use in a variety of power electronic applications, such as AC induction motor drives, solar inverters, UPS systems, traction drives, and PFC circuits. It has good immunity against noise and is also suitable for high frequency applications such as welding equipment, induction heating, medical imaging systems, and computing equipment.

• Working Principle:

  The IXGT24N60B works by combining two transistors and one insulated gate. When the voltage at the gate is below the device\'s threshold voltage, the transistor is off and no current can flow through the device. When the gate voltage is above the threshold voltage, the transistor becomes forward-biased, allowing current to flow through the device. The conductivity of the device is determined by the amount of current that passes through the gate, a process known as “pinch-off”.

  The IXGT24N60B can operate in a variety of modes, such as continuous conduction mode (CCM), discontinuous conduction mode (DCM), and ZVS (Zer

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