Allicdata Part #: | IXGT16N170A-ND |
Manufacturer Part#: |
IXGT16N170A |
Price: | $ 6.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1700V 16A 190W TO268 |
More Detail: | IGBT NPT 1700V 16A 190W Surface Mount TO-268 |
DataSheet: | IXGT16N170A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
30 +: | $ 6.33295 |
Power - Max: | 190W |
Base Part Number: | IXG*16N170 |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 850V, 16A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 36ns/160ns |
Gate Charge: | 65nC |
Input Type: | Standard |
Switching Energy: | 900µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 5V @ 15V, 11A |
Current - Collector Pulsed (Icm): | 40A |
Current - Collector (Ic) (Max): | 16A |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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IXGT16N170A is a type of insulated-gate bipolar transistor (IGBT), specifically a single transistor, which is is a type of power transistor used in power electronic applications. It is suitable for the switching of small and medium power applications such as small inverters, solar inverters, electric and hybrid electric vehicle drives and servo motors. The IXGT16N170A’s proven design and optimized manufacturing process yields efficient and reliable operation.
IXGT16N170A Summary
- 600V blocking voltage
- Extended Gate Emitter Voltage (Vge): -20V
- Maximum Pulsed Gate Power (PG): 1.0W
- Continuous Collector Current (IC): 16A
Application
The IXGT16N170A can be used in a variety of power electronic applications, such as servo motors, small inverters, solar inverters, and electric/hybrid electric vehicle drives. The IXGT16N170A’s N-type semiconductor offers stable and reliable operation with high efficiency and accuracy. Due to its unique design, the device is able to switch rapidly between on and off states, allowing for accurate and reliable operation.
Working Principle
The IXGT16N170A operates on the principle of a p-n junction, with an insulated gate to control the flow of current and a collector-emitter structure for voltage control. A gate voltage applied to the insulated gate will attract carriers from the collector to the base, allowing current to flow from the collector to the emitter. By controlling the gate voltage, the IXGT16N170A can be used to control the flow of current from the collector to the emitter. This is known as "pulsed switching" and is commonly used in power electronics applications.
Advantages of IXGT16N170A
- Low VCE(Sat) of 1.25V and fast switching speeds
- High current carrying capability
- Smooth rise and fall times that limit EMI
- Inherent temperature protection to prevent aberrations
- Robustness against voltage spikes and voltage drops
- Operates at lower DC voltage levels than other IGBTs
Conclusion
The IXGT16N170A is a single insulated-gate bipolar transistor which is capable of switching small to medium power applications quickly and efficiently. It offers a range of advantages over other types of IGBTs such as low VCE(Sat), fast switching speeds, high current carrying capability, robustness and more. Its design and optimized manufacturing process make it the ideal choice for power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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