IXGT45N120 Allicdata Electronics
Allicdata Part #:

IXGT45N120-ND

Manufacturer Part#:

IXGT45N120

Price: $ 5.63
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 75A 300W TO268
More Detail: IGBT 1200V 75A 300W Surface Mount TO-268
DataSheet: IXGT45N120 datasheetIXGT45N120 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 5.11245
Stock 1000Can Ship Immediately
$ 5.63
Specifications
Power - Max: 300W
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 45A, 5 Ohm, 15V
Td (on/off) @ 25°C: 55ns/370ns
Gate Charge: 170nC
Input Type: Standard
Switching Energy: 14mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
Current - Collector Pulsed (Icm): 180A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGT45N120 application field and working principle

The IXGT45N120 is an N-channel insulated gate bipolar transistor (IGBT) that is used in many consumer and industrial applications. The IXGT45N120 is part of the IXYS Advanced Hyperfast family of IGBTs, which are designed for high-frequency switching applications, such as motor drives, UPS systems and resonant power converters. This article provides an overview of the applications of the IXGT45N120, as well as its basic working principle.

The IXGT45N120 is a low voltage, low RDS(on) device that has a high switching speed. It is designed for use in low-power, high-current applications, such as AC motor drives, battery chargers, and solar inverters. It can also be used in AC-DC and DC-DC converters, UPS systems, and in resonant power converters with frequencies up to 20 kHz.

The IXGT45N120 has a current rating of 8A and a voltage rating of 600V. It has an RDS(on) of 7.5 mOhms and a gate charge of 1.5 nC. It has a fast turn-on time of 1.1µs and a fast turnoff time of 4.5µs. The device is packed in an SO-8 SMD package, making it easy to mount on a printed circuit board.

The working principle of the IXGT45N120 is based on the basic IGBT principles. IGBTs are a type of power transistor, which are used for switching and amplification. An IGBT is a combination of a MOSFET and a BJT, and can switch very rapidly, making them ideal for high-frequency applications.

When an IGBT is turned on, a small current is applied to the gate, which in turn creates an inversion layer in the channel of the MOSFET. This inversion layer allows electrons to move more freely and thus increases the conductivity of the device. The current then passes through the drain and source terminals, allowing the device to conduct. When the gate voltage is removed, the inversion layer disappears and the device turns off.

The IXGT45N120 is designed for applications that require high-speed switching and low switching losses. The device’s low Rdson and fast switching times enable high efficiency, allowing it to be used in a variety of applications. Its low voltage and low RDS(on) enable it to operate at a lower voltage, which means it can be used in battery and solar applications, as well as any other low-power application.

The IXGT45N120 is an excellent choice for applications that require high-efficiency, low-power, and high-speed switching. It can be used in many consumer and industrial applications, such as battery chargers, AC motor drives, and solar inverters. Its low voltage and low Rdson make it ideal for battery and solar applications, while its fast switching times make it excellent for high-frequency applications. The IXGT45N120 is a reliable and efficient device that can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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