IXGT40N60B2D1 Allicdata Electronics

IXGT40N60B2D1 Discrete Semiconductor Products

Allicdata Part #:

IXGT40N60B2D1-ND

Manufacturer Part#:

IXGT40N60B2D1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 300W TO268
More Detail: IGBT PT 600V 75A 300W Surface Mount TO-268
DataSheet: IXGT40N60B2D1 datasheetIXGT40N60B2D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 400µJ (off)
Base Part Number: IXG*40N60
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 400V, 30A, 3.3 Ohm, 15V
Td (on/off) @ 25°C: 18ns/130ns
Gate Charge: 100nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 300W
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGT40N60B2D1 is a member of Insulated Gate Bipolar Transistor (IGBT) family. It is a single, low-voltage device designed specifically to reduce power losses and enable fast switching. The device has a 600V Vces rating and 40A Ic rating, which makes it suitable for a wide range of applications. In this article, we will discuss the application fields and working principle of the IXGT40N60B2D1.

The application fields of the IXGT40N60B2D1 include motor drives, motor control, light dimming, DC-DC conversion, renewable energy systems, and power supplies. The device can be used in high-power switching applications such as the control of three-phase induction motors, or for load switching of high-current dc motors. The IXGT40N60B2D1 can also be used for hard switching applications, such as AC-DC and DC-DC converters. In addition, the device can be used for dimming of lamps, LEDs, and other light sources. The device also features low reverse-recovery times, which make it suitable for renewable energy systems.

The working principle of the IXGT40N60B2D1 is based on the principle of an Insulated Gate Bipolar Transistor (IGBT). The device consists of two semiconductor regions, one of which is the emitter and the other is the collector. When an electric signal is applied to the gate terminal, the electric field created by the signal induces an opposite electric field in the emitter-collector junction, which creates a low-impedance path. This is known as controlled turn-on and results in the output current flowing in the same direction as the input signal. When the input signal is reduced to zero, the opposite electric field is nullified and the output current ceases to flow. This is called controlled turn-off, or reverse-recovery time.

The IXGT40N60B2D1 can also be operated in pulsed mode. In this mode, the gate is pulsed with a frequency of up to approximately 200 MHz. This causes the device to be turned on and off very quickly, and results in a current that is switched with a higher efficiency than with a conventional transistor. This operation principle is useful for applications such as motor control and power supplies, where a high-efficiency and high-power switching is required.

The IXGT40N60B2D1 is a versatile device with a wide range of applications. It is suitable for a variety of motor drives, motor control, light dimming, dc-dc conversion, renewable energy systems, and power supply applications. The device’s low reverse-recovery times and its ability to operate in pulsed mode make it an ideal choice for high-efficiency and high-power switching applications.

The specific data is subject to PDF, and the above content is for reference

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