IXGT60N60C3D1

Switching Energy:	800µJ (on), 450µJ (off)
Base Part Number:	IXG*60N60
Supplier Device Package:	TO-268
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	25ns
Test Condition:	480V, 40A, 3 Ohm, 15V
Td (on/off) @ 25°C:	21ns/70ns
Gate Charge:	115nC
Input Type:	Standard
Series:	GenX3™
Power - Max:	380W
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 40A
Current - Collector Pulsed (Icm):	300A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IXGT60N60C3D1 Application Field and Working Principle of Single IGBT

IGBTs, or Insulated Gate Bipolar Transistors, are switching devices capable of combining the best of both bipolar and MOSFET technologies, resulting in the ultimate low resistance, low power loss device. The IXGT60N60C3D1 single IGBT, in particular, is a unique and powerful solution for a wide range of applications.Power management, motor control, and switching power supplies are just a few of the potential uses of IXGT60N60C3D1 devices. Additionally, IXGT60N60C3D1 can be used in inverters, soft starters, UPS systems, and virtually any application where high power switches or amplifiers are needed.The built-in gate-to-emitter voltage, or VGE rating, of the IXGT60N60C3D1 as used in circuit designs is 25V, and its current rating is 60A. The IXGT60N60C3D1 also has a high current gate spike, which is important for high speed designs and is rated at approximately 200mA. The IXGT60N60C3D1 is also rapidly switching, with a low turn-on delay, and has an outstanding thermal management capability due to its convenient copper clip mounting pads. Another factor that truly sets this IGBT apart from its contemporaries is its industry-leading low on-state resistance.The working principle of the IXGT60N60C3D1 Single IGBT is fairly simple. It is composed of a p-type metal-oxide-semiconductor (MOS) input, a n-type MOS output, and a bipolar junction transistor buried in the middle. The IGBT leverages the unique properties each component has to its own advantage.When the gate-to-source voltage (VGS) is applied to the input, negative charges are repelled from the p-type channel, allowing majority carriers (holes) to flow through. The flow of holes is coupled with a flow of electrons from the harnessed bipolar junction transistor, which combine with the holes moving through the channel. This combination of electrons and holes is an effective current channel known as an inversion layer, allowing majority carriers to flow through the output.When the voltage is removed, the IGBT action is reversed, becoming an OFF state. This makes IGBTs ideal for switching power on and off quickly and efficiently.The IXGT60N60C3D1 Single IGBT is a powerful, efficient device with a wide variety of potential applications. With its low resistance and high power rating, it is perfect for situations where high current and low power loss are key. Coupled with the rapid switching ability and built-in thermal management, the IXGT60N60C3D1 offers an unbeatable combination of performance and convenience.

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