| Allicdata Part #: | IXTM10P60-ND |
| Manufacturer Part#: |
IXTM10P60 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | POWER MOSFET TO-3 |
| More Detail: | |
| DataSheet: |  IXTM10P60 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Last Time Buy |
| FET Type: | -- |
| Technology: | -- |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| Vgs (Max): | -- |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -- |
| Mounting Type: | -- |
| Supplier Device Package: | -- |
| Package / Case: | -- |
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The IXTM10P60 is a voltage-controlled insulated gate field effect transistor (IGFET) that is commonly used in power switching applications. It can be used to switch high currents and voltages, so it is a popular choice for automotive and power conversion applications.
The IXTM10P60 is an enhancement-mode, 8x3mm2 controlled-avalanche, non-punch-through device that operates at a maximum drain-source voltage of 60V. The device also has an RDS(on) at 10A, a gate-source voltage of ±20V, and is capable of efficiently controlling very large currents. It has a low gate charge and low gate input capacitance which makes it highly suitable for use in high frequency switching applications.
The main advantage of the IXTM10P60 is its ability to switch very large currents and voltages, making it ideal for automotive and power converters. The device\'s low gate charge and low gate input capacitance makes it suitable for power supply circuits and high frequency switching applications. Additionally, the IXTM10P60 has a high operating temperature range of -55°C to +175°C, allowing it to be used in a variety of tough environments.
The working principle of the IXTM10P60 transistor is relatively simple. The device works by using a gate voltage to control an insulated gate. The gate voltage can control the current flow by turning the device on or off. When the gate voltage is applied, it creates an electric field between the source and drain of the transistor, allowing current to flow when the voltage is applied and stopping it when the voltage is removed.
The IXTM10P60 can be used in wide variety of applications. Its ability to switch very large currents and voltages make it ideal for motor control, power supply circuits, and lighting applications. Additionally, its high power efficiency and low power consumption makes it a great choice for use in industrial systems, as well as consumer appliances. Finally, its high operating temperature range and low gate input capacitance allow it to be used in hostile and environmental conditions.
In conclusion, the IXTM10P60 is an insulated gate field effect transistor (IGFET) that is commonly used in power switching applications. It has a maximum drain-source voltage of 60V and is highly efficient in controlling very large currents. Its low gate charge and low input capacitance make it suitable for high frequency switching applications and its high operating temperature range makes it a great choice for use in harsh environments. Thus, this transistor is a great choice for applications requiring large currents, high efficiency, and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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|---|
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