Allicdata Part #: | IXTM15N60-ND |
Manufacturer Part#: |
IXTM15N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | POWER MOSFET TO-3 |
More Detail: | |
DataSheet: | IXTM15N60 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
Description
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IXTM15N60 Application Field and Working PrincipleIXTM15N60 is an N-channel enhancement mode MOSFET from IXYS Corporation, which is mainly used in switching high voltages and high currents. It is also suitable for high-speed switching applications in consumer and industrial electronics. This article is dedicated to finding out more about IXTM15N60’s application field and working principle. Application FieldIXTM15N60 is a power MOSFET with an impressive switching speed of around 50 ns. It can be used in applications where fast switching speeds and a precision on/off control is required. This can include switching motors, lighting, consumer and industrial electronics, HVAC systems, and many other high-power and high-current applications.For switching applications, IXTM15N60’s maximum peak drain current rating is 150 A and it has a maximum drain-source voltage rating of 800 V. This allows it to handle currents up to 800V without any problem. In addition, it can also provide superior thermal performance and efficiency compared to other MOSFETs. Working PrincipleThe working principle behind IXTM15N60 lies in its construction. With the aid of two highly doped N-type regions, this MOSFET is able to control the current applied to the drain terminal by controlling the voltage applied across the gate terminal. To put it simply, the MOSFET works by controlling the on or off state of a circuit with the help of a tiny gate-to-source voltage. When the gate is positive with respect to the source, a depletion layer forms in the N-type channel. This depletion layer restricts current flow and the MOSFET is in its non-conductive state. Conversely, when the gate is negative than the source, the channel’s depletion layer dissipates, allowing current to flow and turning the MOSFET into its conducting state. IXTM15N60 is designed to be a P-channel MOSFET. This means that the polarity of the MOSFET’s voltage is “reversed” as compared to a normal N-channel MOSFET. This also enables IXTM15N60 to work as an amplifier, since the signal at the gate is “inverted” before it reaches the output. In addition, IXTM15N60 also has a low input capacitance which is necessary for high speed switching applications. It also provides the user with the ability to change the threshold voltage by varying the gate-source voltage, which is useful for controlling the flow of current.In conclusion, IXTM15N60 is an N-channel MOSFET from IXYS Corporation, specifically designed for use in high current and high voltage applications. It provides excellent thermal performance and switching speeds and is suitable for a wide range of applications. Furthermore, its working principle is based on controlling the on/off state of a circuit with the help of a tiny gate-to-source voltage.The specific data is subject to PDF, and the above content is for reference
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